UMW IRLML6402

UMW R UMW IRLML6402 P-Channel Enhancement MOSFET ■ Features SOT–23 ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. ● Low profile(＜1.1mm). ● Available in tape and reel. 1. BASE ● Fast switching. 2. EMITTER 3. COLLECTOR MARKING 1E MK ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current VGS=4.5V @ TA=25℃ Continuous Drain Current ID VGS=4.5V@ TA=70℃ Pulsed Drain Current a Power Dissipation @ TA=25℃ Power Dissipation @ TA=70℃ Single Pulse Avalanche Energy b Thermal Resistance.Junction- to-Ambient IDM PD EAS RthJA Linera Derating Factor Unit V -3.7 -2.2 A -30 1.3 0.8 11 W mJ 100 ℃/W 0.01 W/℃ Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 ℃ Notes: a.Repetitive Rating :Pulse width limited by maximum junction temperature b.Starting TJ=25℃, L=1.65mH, RG=25Ω, IAS=-3.7A www.umw-ic.com 1 友台半导体有限公司 UMW R UMW IRLML6402 P-Channel Enhancement MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Test conditions Symbol Drain-source Breakdown voltage Zero Gate Voltage Drain Current ce leadage VDSS IDSS I e Static drain-source on- resistance Forward Transconductance V = 0V VDS = -20 V, V ID = 0V VDS = -20 V, V = 0V, TJ V V RDS(on) V = -4.5V 0.050 ID= -3.1A, V = -2.5V 0.080 0.135 Ciss VDS = -10 V, V Reverse transfer capacitance Crss f= 1MHz -0.40 gd td(on) Rise time tr Turn-off delay time td(off) = 0 V, VDS = -10V ,V = -5.0 V , ID ID 8.0 12 1.2 1.8 2.8 4.2 VDD= -10 V, 48 RD Ω 588 Ω 381 tf R TJ=25℃, IF = -1.0 A, μs Pulsed source curren ISM MOSFET symbo l showing the integral reverse p-n junction diode Diode forward voltage VSD TJ=25℃,V IS pF nC 350 trr Continuous source current Ω 110 Reverse recovery time rr nA V 145 Fall time Reverse recovery charge -0.55 S g rain Charge tit -25 ℃ ID Coss Turn-on delay time V ±100 VDS = -10 V, ID Unit -1.0 , ID gfs gs Max -20 =±12V Input capacitance ce Charge Typ VDS = V Output capacitance e Min ns 43 11 ns nC D -1.3 A G = 0 V, IS = -1.0 A S -22 -1.2 V lse width limited by max.junction temperature. e width ≤ 400μs, Duty cycle ≤ www.umw-ic.com 2 友台半导体有限公司 UMW R UMW IRLML6402 P-Channel Enhancement MOSFET ■ Typical Characterisitics 100 100 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 -2.25V 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 -VDS , Drain-to-Source Voltage (V) 10 -2.25V 1 0.1 100 Fig 1. Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 150 ° C V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 -VGS , Gate-to-Source Voltage (V) 8.0 1 10 -VDS , Drain-to-Source Voltage (V) 100 ID = -3.7A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics www.umw-ic.com 20µs PULSE WIDTH TJ = 150 °C Fig 2. Typical Output Characteristics 100 10 2.0 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP TOP Fig 4. Normalized On-Resistance 3 友台半导体有限公司 UMW R UMW IRLML6402 P-Channel Enhancement MOSFET ■ Typical Characterisitics 1000 -VGS , Gate-to-Source Voltage (V) 800 C, Capacitance(pF) 10 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 600 400 Coss 200 Crss 0 VDS =-10V 8 6 4 2 0 1 10 ID = -3.7A 100 FOR TEST CIRCUIT SEE FIGURE 13 0 3 VDS, Drain-to-Source Voltage (V) 9 12 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -II D , Drain Current (A) -ISD , Reverse Drain Current (A) 6 QG , Total Gate Charge (nC) 10 . TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.2 0.6 0.8 1.0 1ms 1 10ms 0.1 0.1 1.2 -VSD ,Source-to-Drain Voltage (V) 1 10 -VDS , Drain-to-Source Voltage (V) 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage www.umw-ic.com 100us TC = 25 ° C TJ = 150 ° C Single Pulse V GS = 0 V 0.4 10us 10 4 友台半导体有限公司 UMW R UMW IRLML6402 P-Channel Enhancement MOSFET ■ Typical Characterisitics 25 EAS , Single Pulse Avalanche Energy (mJ) -ID , Drain Current (A) 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TC , Case Temperature ( ° C) 150 Fig 9. Maximum Drain Current Vs. Case Temperature ID -1.7A -3.0A BOTTOM -3.7A TOP 20 15 10 5 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) 150 Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 1 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 1 10 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.umw-ic.com 5 友台半导体有限公司 UMW R UMW IRLML6402 P-Channel Enhancement MOSFET R DS(on) , Drain-to -Source Voltage ( Ω ) 0.14 0.12 0.10 0.08 Id = -3.7A 0.06 0.04 0.02 2.0 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage ( V ) 0.20 VGS = -2.5V 0.16 0.12 0.08 VGS = -4.5V 0.04 0.00 0 5 10 15 20 25 30 -I D , Drain Current ( A ) Fig 12. Typical On-Resistance Vs. Gate Voltage www.umw-ic.com R DS ( on ) , Drain-to-Source On Resistance ( Ω ) ■ Typical Characterisitics Fig 13. Typical On-Resistance Vs. Drain Current 6 友台半导体有限公司