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UMW FDN338P

UMW FDN338P

  • 厂商:

    UMW(友台)

  • 封装:

    SOT-23

  • 描述:

    SOT-23塑料封装MOSFET

  • 数据手册
  • 价格&库存
UMW FDN338P 数据手册
UMW R UMW FDN338P SOT-23 Plastic-Encapsulate MOSFETS FDN338 P-Channel 20-V(D-S) MOSFET SOT–23 ID RDS(on)MAX V(BR)DSS   112mΩ@-4.5V  -20 V -2.8 A 142mΩ@-2.5V   1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLICATION z z MARKING Load Switch for Portable Devices DC/DC Converter Equivalent Circuit 338 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.8 Pulsed Drain Current IDM -10 Continuous Source-Drain Diode Current IS -0.72 Maximum Power Dissipation PD 0.4 W ℃/W Thermal Resistance from Junction to Ambient(t ≤5s) R θJA 312.5 Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 www.umw-ic.com 1 Unit V A ℃ 友台半导体有限公司 UMW R UMW FDN338P SOT-23 Plastic-Encapsulate MOSFETS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 -1 V Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance a Forward transconductance RDS(on) a gfs VGS =-4.5V, ID =-2.8A 0.090 0.112 VGS =-2.5V, ID =-2.0A 0.110 0.142 VDS =-5V, ID =-2.8A 6.5 Ω S b Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf 405 VDS =-10V,VGS =0V,f =1MHz pF 75 55 VDS =-10V,VGS =-4.5V,ID =-3A VDS =-10V,VGS =-2.5V,ID =-3A 5.5 10 3.3 6 0.7 nC 1.3 f =1MHz VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω 6.0 Ω 11 20 35 60 30 50 10 20 ns Drain-source body diode characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage a IS -1.3 TC=25℃ -10 ISM VSD A IS=-0.7A -0.8 -1.2 V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. www.umw-ic.com 2 友台半导体有限公司
UMW FDN338P 价格&库存

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UMW FDN338P
    •  国内价格
    • 5+0.18530
    • 20+0.16895
    • 100+0.15260
    • 500+0.13625
    • 1000+0.12862
    • 2000+0.12317

    库存:0