UMW SI2302A

UMW R UMW SI2302A N-Channel Enhancement MOSFET ■ Features SOT–23 ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A ■ Marking 1. GATE 2. SOURCE G 1 S 2 3. DRAIN 3 D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current *1 Ta=25℃ ID Ta=70℃ Pulsed Drain Current Power Dissipati Thermal Resistance.Junction- to-Ambient IDM Ta=25℃ PD Ta=70℃ *1 RthJA *2 Junction Temperature Storage Temperature Range Unit V 2.8 2.2 A 10 1.25 0.8 100 166 TJ 150 Tstg -55 to 150 W ℃/W ℃ Notes: *1.Surface Mounted on FR4 Board, t ≤ 5 sec. *2.Surface Mounted on FR4 Board. www.umw-ic.com 1 友台半导体有限公司 UMW R UMW SI2302A N-Channel Enhancement MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Symbol VDSS IDSS IGSS VGS(th) RDS(On) Forward Transconductance * gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time Continuous Source Current (Diode Conduction) Diode Forward Voltage Test Conditions ID=250μA, VGS=0V Typ Max 20 Unit V VDS=20V, VGS=0V 1 VDS=20V, VGS=0V ,TJ=55 ℃ 10 μA ±100 nA 0.95 1.9 V VGS=4.5V, ID=3.6A 45 85 VGS=2.5V, ID=3.1A 70 115 VDS=0V, VGS=±8V VDS=VGS , ID=250μA VDS=5V,ID=3.6A 0.62 8 mΩ S 300 VGS=0V, VDS=10V, f=1MHz pF 120 80 4 VDS=10V,VGS=4.5V,ID=3.6A 10 nC 0.65 1.5 VGS=4.5V, VDS=10V, RL=5.5Ω,RGEN=6Ω ID=3.6A tf 7 15 55 80 16 60 10 25 1.6 IS VSD Min Is=1.6A ,VGS=0V 0.76 ns A 1.2 V * Pulse test: PW ≤300us duty cycle≤ 2% www.umw-ic.com 2. 友台半导体有限公司 R UMW UMW SI2302A N-Channel Enhancement MOSFET ■ Typical Characterisitics Output Characteristics 10 Transfer Characteristics 10 VGS = 5 thru 2.5 V 8 2V I D – Drain Current (A) I D – Drain Current (A) 8 6 4 2 1.5 V 0, 0.5, 1 V 6 TC = 125 。 C 4 。 2 25 C 。 –55 C 0 0 0 1 2 3 4 5 0 0.5 VDS – Drain-to-Source Voltage (V) 2.0 2.5 Capacitance 1000 0.12 800 C – Capacitance (pF) r DS(on)– On-Resistance ( Ω ) 1.5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 1.0 VGS = 2.5 V 0.09 VGS = 4.5 V 0.06 0.03 600 Ciss 400 Coss 200 Crss 0 0 0 2 4 6 8 10 0 Gate Charge 1.8 1.6 4 r DS(on)– On-Resistance ( Ω ) (Normalized) V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 3.6 A 3 2 1 0 0 1 2 3 4 5 6 12 16 20 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A 1.4 1.2 1.0 0.8 0.6 –50 7 0 50 100 150 C) TJ – Junction Temperature (。 Qg – Total Gate Charge (nC) www.umw-ic.com 8 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 5 4 3 友台半导体有限公司 UMW R UMW SI2302A N-Channel Enhancement MOSFET ■ Typical Characterisitics Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on)– On-Resistance ( Ω ) I S – Source Current (A) 10 TJ = 150。 C TJ = 25。 C 0.16 0.12 ID = 3.6 A 0.08 0.04 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD – Source-to-Drain Voltage (V) 12 –0.0 10 ID = 250 A Power (W) V GS(th) Variance (V) 8 Single Pulse Power 14 0.1 –0.1 –0.2 8 TC = 25。 C Single Pulse 6 4 –0.3 2 . –0.4 –50 0 50 100 0 150 0.01 0.10 TJ – Temperature (。 C) 1 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 6 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.2 4 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10–4 Single Pulse 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.umw-ic.com 4 友台半导体有限公司