UMW 30N06

UMW R UMW 30N06 １． The 30N06 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.The 30N06 meet the RoHS and Green Product requirenment,100%EAS guaranteed with full function reliability approved. ２． RDS(on)=25mΩ @ VDS=60V Avanced high cell density Trench technology Super Low Gate Charge Excellent Cdv/dt effect decline 100%EAS Guaranteed Green Device Available ３． High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Load Switch ４． www.umw-ic.com 1 Pin Function 1 Gate 2 Drain 3 Source 4 Drain 友台半导体有限公司 UMW R UMW 30N06 5. Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current, VGS @10V1 Pulsed drain current 2 Symbol VDS VGS TC=25ºC TC=100ºC ID IDM EAS IAS PD TJ TSTG Single pulse avalanche energy3 Avalanche current TC=25 ºC Total power dissipation4 Operation junction temperature range Storage temperature range Units V V A A A mJ A W ºC ºC Rating 60 +20 25 18 50 34.5 22.6 34.7 -55 to150 -55 to150 6. Thermal characteristics Parameter Symbol Typ Max Thermal resistance,Junction-ambient1 RθJA -- 62 Thermal resistance,Junction-case1 RθJC -- 3.6 www.umw-ic.com 2 Unit ºC/W 友台半导体有限公司 UMW R UMW 30N06 7. Electrical characteristics Parameter Drain-source breakdown voltage BVDSS temperature coefficient Static drain-source on-resistance2 Gate threshold voltage VGS(th) temperature coefficient (TJ=25°C,unless otherwise noted Test Conditions Min Typ Max Units VGS=0V,ID=250μA 60 V Reference to 25 ºC, V/°C 0.063 ID=1mA Symbol BVDSS △BVDSS/△TJ RDS(on) VGS=10V,ID=15A VGS=4.5V,ID=10A VGS(th) △VGS(th) VDS=VGS, ID=250μA Drain-source leakage current IDSS Gate- source leakage current Forward transconductance IGSS gfs VDS=48V, VGS=0V TJ=25°C VDS=48V, VGS=0V TJ=55°C VGS=+20V, VDS=0V VDS=5V, ID=15A Gate resistance Rg VDS=0V, VGS=0V,f=1MHz Total gate charge(4.5V) Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Single pulse avalanche energy5 EAS VDS=48V, VGS=4.5V ID =10A VDD=30V,ID=10A, RG=3.3Ω, VGS=10V VDS=25V,VGS=0V, f=1MHz 25 30 1.2 - 30 38 2.5 -5.24 mΩ V mV/°C 1 μA 5 μA +100 17 nA S 3.2 Ω 12.56 3.24 6.31 8 14.2 24.4 4.6 1345 72.5 54.4 VDD=25V,L=0.1mH, 15.2 IAS=15A Continuous source current1,6 IS 25 VG= VD==0V, Pulsed source current2,6 ISM Force current 50 VSD Diode forward voltage2 1.2 VGS=0V,IS=1A, TJ=25ºC Note:1.The data tested by surface mounted on a 1 inch2 FR-4 board with 20Z copper. nC ns pF mJ A A V 2.The data tested by pulsed, pulse width