UMW SI2302B

UMW R UMW SI2302B SOT-23 Plastic-Encapsulate MOSFETS UMW SI2302B N-Channel 20-V(D-S) MOSFET   20 V SOT–23 ID RDS(on)MAX V(BR)DSS 80 mΩ@4.5V  2.5A 100mΩ@ 2.5V   1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices z DC/DC Converter z MARKING Equivalent Circuit A2SHB Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID 2.5 Continuous Source-Drain Current(Diode Conduction) IS 0.6 Power Dissipation PD Thermal Resistance from Junction to Ambient (t≤5s) RθJA Unit V A W 0.4 ℃/W 312.5 Operating Junction TJ 150 Storage Temperature TSTG -55 ~+150 www.umw-ic.com 1 ℃ 友台半导体有限公司 UMW R UMW SI2302B Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max 0.95 1.2 Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10µA 20 VGS(th) VDS =VGS, ID =50µA 0.65 Gate-body leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1 µA Gate-threshold voltage a Drain-source on-resistance Forward transconductance rDS(on) a Diode forward voltage VGS =4.5V, ID =2.6A 0.045 0.070 VGS =2.5V, ID =2.1A 0.060 0.100 gfs VDS =5V, ID =3.6A 8 VSD IS=0.94A,VGS=0V 0.76 1.2 4.0 10 V Ω S V Dynamic Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 1.5 Ciss 300 Input capacitance b Output capacitance b Reverse transfer capacitance Switching Coss b VDS =10V,VGS =4.5V,ID =3.6A VDS =10V,VGS =0V,f=1MHz nC 0.65 pF 120 80 Crss b Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf VDD=10V, RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω 7 15 55 80 16 60 10 25 ns Notes : a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. These parameters have no way to verify. www.umw-ic.com 2 友台半导体有限公司