WSD2068DN

WSD2068 Dual N-Ch MOSFET General Description Product Summery The WSD2068 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 15.5mΩ 7.5A Applications The WSD2068 meet the RoHS and Green Product requirement with full function reliability approved. z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. z DC-DC Power System Features z ESD:2KV z Advanced high cell density Trench technology DFN2X3A_EP Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ ±12 V 1 7.5 A 1 6.5 A 30 A 1.5 W Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 Total Power Dissipation 3 PD@TA=70℃ Total Power Dissipation 1.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA www.winsok.tw Parameter 1 Thermal Resistance Junction-ambient (Steady State) Thermal Resistance Junction-ambient 1 (t