WSD2068
Dual N-Ch MOSFET
General Description
Product Summery
The WSD2068 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate
charge for most of the small power switching
and load switch applications.
BVDSS
RDSON
ID
20V
15.5mΩ
7.5A
Applications
The WSD2068 meet the RoHS and Green
Product requirement with full function
reliability approved.
z Power Management in Notebook Computer, Portable
Equipment and Battery Powered Systems.
z DC-DC Power System
Features
z ESD:2KV
z Advanced high cell density Trench technology
DFN2X3A_EP Pin Configuration
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
±12
V
1
7.5
A
1
6.5
A
30
A
1.5
W
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
2
3
Total Power Dissipation
3
PD@TA=70℃
Total Power Dissipation
1.0
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
RθJA
RθJA
www.winsok.tw
Parameter
1
Thermal Resistance Junction-ambient (Steady State)
Thermal Resistance Junction-ambient
1
(t
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