LL4148

LL4148 Silicon Epitaxial Planar Switching Diode Fast switching diode in MiniMELF case especially suited for automatic surface mounting Absolute Maximum Ratings (Ta = 25 OC) Parameter LL-34 Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF(AV) 200 mA Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range 1) Ptot 0.5 1 4 1) 500 Tj 175 O Tstg - 65 to + 175 O IFSM A mW C Valid provided that electrodes are kept at ambient temperature. Rev:2024A1 C LL4148 Characteristics at Ta = 25 OC Symbol Min. Max. Unit VF - 1 V IR IR IR - 25 5 50 nA µA µA V(BR)R 100 - V Capacitance at VR = 0, f = 1 MHz Ctot - 4 pF Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Vfr - 2.5 V Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr - 4 ns RthA - 0.35 1) K/mW ηV 0.45 - - Parameter Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage tested with 100 µA Pulses Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V Vo 2nF 5K ~ ~ ~ VRF =2V Valid provided that electrodes are kept at ambient temperature. 60 1) Rectification Efficiency Measurement Circuit Rev:2024A1 LL4148 Dynamic forward resistance versus forward current Forward characteristics 10 LL 4148 LL 4148 3 10 4 Tj=25 oC f=1KHz 5 2 10 2 o Tj=100 C iF 10 3 o Tj=25 C rf 10 5 2 10 2 5 1 2 10 10 -1 5 2 10 -2 0 2V 1 1 10 -1 10 -2 1 10 2 mA 10 VF IF Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that electrodes are kept at ambient temperature mW 1000 500 LL 4148 LL 4148 Tj=25 oC f=1MHz 900 1.1 P tot Power Dissipation: Ptot (mW) 400 800 Ctot(VR ) Ctot(0V) 700 1.0 300 600 500 0.9 200 400 300 100 0.8 200 100 0 0 0 25 100 150 Ambient Temperature: Ta ( C) 200 O 0 100 Curve Power Derating Tamb o 200 C 0.7 0 0 2 4 6 8 10 V VR Rev:2024A1 LL4148 Leakage current versus junction temperature nA 10 4 LL 4148 5 2 10 3 IR 5 2 10 2 5 2 10 5 VR=20V 2 1 0 o 200 C 100 Tj Admissible repetitive peak forward current versus pulse duration Valid provided that electrodes are kept at ambient temperature A 100 LL 4148 IFRM 2 tp 10 IFRM T=1/fp v=tp/T I 5 4 3 t v=0 5 4 3 T 0.1 2 0.2 1 0.5 5 4 3 2 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp Rev:2024A1