1Gbit x8, x16: NAND Flash Memory
NAND Flash Memory
(AX20NV1G8, AX20NV1G6)
Features
•
•
•
•
•
•
•
•
Interface
▪ Open NAND Flash Interface
(ONFI 1.0) compliant
▪ x8, x16
Technology
▪ Single-level cell (SLC)
▪ 3xnm NAND Process
Operating Voltage Range
▪ VCC: 2.70V – 3.60V
Operating Temperature Range
▪ Industrial: -40°C to 85°C
Packages
▪ 48-pin TSOP (12.0mm x 20mm)
▪ 63-ball FBGA (9mm x 11mm)
Device Signature
▪ Manufacturer’s ID
▪ Device ID
▪ Device Parameters (ONFI)
▪ Unique ID
One Time Programmable Area (OTP)
▪ One Block (128K + 4K bytes)
Quality and Reliability
▪ Recommended Error Correction Code:
4-bit / 528 bytes of data
▪ Data retention: 10 years
▪ Endurance (P/E cycles): 100K (Typ.)
•
•
•
•
▪ Block zero (block address 00h) is a valid
block when shipped from factory and will
remain valid for at least 1K P/E cycles with
ECC
Memory Array Organization
▪ x8
• Page size: 2112 bytes
(2048 + 64 bytes)
▪ x16
• Page size: 1056 words
(1024 + 32 words)
▪ Block size: 64 pages
(128K + 4K bytes)
▪ Device (Plane) size: 1024 blocks
Data Protection
▪ WP# signal: write protect entire device
Device Status
▪ Ready/busy# (R/B#) signal: hardware
method for detecting internal operation
completion status
Advanced Command Set
▪ Program page cache mode
▪ Read page cache mode
▪ Data move (page copy back):
Internal data move
Performance
Device Operation
Values
Units
25.0 (Maximum)
µs
300.0 (Typical)
µs
Block Erase
3.0 (Typical)
ms
Standby
10.0 (Typical)
µA
Read page
15.0 (Typical)
mA
Read page
Program Page
Revision: F
Axia Memory Technology
P a g e 1 | 51
1Gbit x8, x16: NAND Flash Memory
Table of Contents
Features ...................................................................................................................................................... 1
Performance .............................................................................................................................................. 1
Table of Contents ..................................................................................................................................... 2
General Description................................................................................................................................. 4
Ordering Options ..................................................................................................................................... 5
Valid Combinations — Standard ...................................................................................................... 5
Signal Description and Assignment ................................................................................................... 6
Package Options ...................................................................................................................................... 7
48-Pin TSOP (Top View) ..................................................................................................................... 7
63-Ball FBGA (Balls Down, Top View) ............................................................................................ 8
Architecture ............................................................................................................................................... 9
Memory Array Architecture & Addressing .................................................................................... 9
Status Register Definition ................................................................................................................ 10
Identification Definition (Address 00h) ........................................................................................ 11
Identification Definition (Address 20h) ........................................................................................ 12
Parameter Page Structure & Values.............................................................................................. 12
Bus Interface ........................................................................................................................................... 16
Standby ................................................................................................................................................. 16
Busy ....................................................................................................................................................... 16
Device Protection (Write Protect WP#) ........................................................................................ 16
Command Input .................................................................................................................................. 17
Address Input...................................................................................................................................... 17
Data Input ............................................................................................................................................. 18
Data Output.......................................................................................................................................... 19
Command Set...................................................................................................................................... 20
Device Initialization ............................................................................................................................... 42
Device Power-Down .............................................................................................................................. 44
Electrical Specifications....................................................................................................................... 45
Error Management ................................................................................................................................. 48
ECC Management................................................................................................................................... 49
Product Use Limitations....................................................................................................................... 50
Revision: F
Axia Memory Technology
P a g e 2 | 51
1Gbit x8, x16: NAND Flash Memory
Limited Warranty ................................................................................................................................ 50
Revision History ..................................................................................................................................... 51
Revision: F
Axia Memory Technology
P a g e 3 | 51
1Gbit x8, x16: NAND Flash Memory
General Description
Axia Memory Technology’s AX20NV1Gx is a 3.0V 1 Gbit NAND Flash organized as 2112 bytes × 64 pages
× 1024 blocks. All read and program operations are performed using a 2112-byte register; allowing data to
be transferred to and from the memory array in 2112-bytes increments. The erase operation is implemented
in a single block unit (2112 bytes × 64 pages). ECC is required for higher data reliability.
Axia’s NAND Flash devices communicate through an asynchronous ONFI 1.0 compatible interface for highperformance I/O operations. It is a multiplexed 8-bit/16-bit bus (I/Ox) to transfer commands, address, and
data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE,
WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status
(R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the
same in Axia’s NAND device family, enabling future upgrades to higher densities without board redesign.
Additionally, Axia’s NAND Flash devices support a copy back function which optimizes management of
defective blocks. When a page program operation fails, the data already loaded in the page buffer can be
directly programmed to another page inside the same array section without the time-consuming serial data
insertion phase.
Also present in Axia’s NAND Flash devices is a cache read feature that increases the read throughput.
During cache reading, the device loads the new data in a cache register while the previous data is
transferred to the I/Os.
And finally, Axia’s NAND Flash devices provide special features listed below in Table 1:
Table 1: Special Features
#
1
2
Feature Description
One-Time Programmable Area
Unique Identifier
Revision: F
Details
Size: 1 block (128K + 4K bytes)
Size: 16 bytes
Axia Memory Technology
P a g e 4 | 51
1Gbit x8, x16: NAND Flash Memory
Ordering Options
The ordering part numbers are firmed by a valid combination of the following options:
AX 20 N V 1G 8 1 1 TA I 10 1
Packing Type
1: Tray
2: Tape & Reel
Special Features
10: MID Value 1
Temperature Range
C: 0°C to +85°C
I: -40°C to +85°C
E: -40°C to +105°C
Package Type
BA: 63-ball WFBGA (9x11x1.0)
TA: 48-pin TSOP
Die Code
1
NAND Generation
1: 1st Generation SLC
Bus Width
8: x8
6: x16
Density
1G: 1Gigabit
Operational Voltage
V: 2.70V to 3.60V
E: 1.65V to 1.95V
NAND Grade
N: Standard
Product Family
20: ONFI NAND
Brand
AX: Axia Memory Technology
Valid Combinations — Standard
Valid Combinations list includes device configurations currently available. Contact your local sales office to
confirm availability of specific valid combinations and to check on newly released combinations.
Table 2: Valid Combinations List
Valid Combinations
Base Part
Number
AX20NV1G
Bus
Width
x8
Generation
1
Die
Code
1
Package
type
BA, TA
Temperature
Range
I
Special
Features
10
Packing
Type
1, 2
Part
Number
AX20NV1G811BAI101
AX20NV1G811TAI101
AX20NV1G811BAI102
Revision: F
Axia Memory Technology
P a g e 5 | 51
1Gbit x8, x16: NAND Flash Memory
Signal Description and Assignment
Figure 1: Device Pinout
ALE
CE#
WP#
RE#
WE#
AXIA
I/O[x:0]
x: 7/15
NAND
1Gbit
CLE
R/B#
Table 3: Signal Description
Signal
Type
Description
CE#
Input
CLE
Input
ALE
Input
WE#
Input
RE#
Input
WP#
Input
R/B#
Output
Chip enable: Enables or disables the NAND Flash.
Command latch enable: Loads a command from x8 - I/O[7:0], x16 - I/O[15:0] into
the command register.
Address latch enable: Loads an address from x8 - I/O[7:0], x16 - I/O[15:0] into the
address register.
Write enable: Transfers commands, addresses, and serial data from the host system
to the NAND Flash.
Read enable: Transfers serial data from the NAND Flash to the host system.
Write protect: Enables or disables NAND Flash memory array program and erase
operations.
Ready/busy: An open-drain, active-low output that requires an external pull-up
resistor. This signal indicates NAND Flash activity.
I/O [7:0] - x8
I/O [15:0] - x16
Input / Output
VCC
Supply
VCC: Core and I/O power supply.
VSS
Supply
VSS: Core and I/O ground supply.
No connect: NCs are not internally connected. They can be driven (VCC/VSS) or left
unconnected.
Do not use: DNUs must be left unconnected.
NC
DNU
Revision: F
Data inputs/outputs: The bidirectional I/Os transfer address, data, and command
information.
Axia Memory Technology
P a g e 6 | 51
1Gbit x8, x16: NAND Flash Memory
Package Options
48-Pin TSOP (Top View)
1
48
1
48
NC
text
text
NC
NC
text
text
VSS
NC
text
text
NC
NC
text
text
IO15
NC
text
text
NC
NC
text
text
IO14
NC
text
text
NC
NC
text
text
IO13
NC
text
text
IO7
NC
text
text
IO7
NC
text
text
IO6
NC
text
text
IO6
R/B#
text
text
IO5
R/B#
text
text
IO5
RE#
text
text
IO4
RE#
text
text
IO4
CE#
text
text
NC
CE#
text
text
IO12
NC
text
text
NC
NC
text
text
NC
NC
text
text
NC
NC
text
text
NC
VCC
text
12
37
text
VCC
VCC
text
12
37
text
VCC
VSS
text
13
36
text
VSS
VSS
text
13
36
text
NC
NC
text
text
NC
NC
text
text
NC
NC
text
text
NC
NC
text
text
NC
CLE
text
text
NC
CLE
text
text
IO11
ALE
text
text
IO3
ALE
text
text
IO3
WE#
text
text
IO2
WE#
text
text
IO2
WP#
text
text
IO1
WP#
text
text
IO1
NC
text
text
IO0
NC
text
text
IO0
NC
text
text
NC
NC
text
text
IO10
NC
text
text
NC
NC
text
text
IO9
NC
text
text
NC
NC
text
text
IO8
NC
text
text
NC
NC
text
text
VSS
Revision: F
48-Pin
TSOP
Package
(x8)
24
25
48-Pin
TSOP
Package
(x16)
24
Axia Memory Technology
25
P a g e 7 | 51
1Gbit x8, x16: NAND Flash Memory
63-Ball FBGA (Balls Down, Top View)
Revision: F
Axia Memory Technology
P a g e 8 | 51
1Gbit x8, x16: NAND Flash Memory
Architecture
Axia’s NAND Flash devices use ONFI 1.0 compatible interface for all operations. Data, commands, and
addresses are multiplexed onto the I/O pins. The commands received at the I/Os are latched by a command
register and are used to determine the operations the device must perform. The addresses are latched into
an address register and sent either to a row decoder to select a row address, or to a column decoder to
select a column address. Data is transferred to or from the NAND Flash memory array either in a byte
format (x8) or in a word format (x16) through a page buffer which is a combination of a data register and a
cache register. During normal page operations, the data and cache registers act as a single register. During
cache operations, the data and cache registers operate independently to increase data throughput. The
NAND Flash memory array is programmed and read using page-based operations and is erased using
block-based operations. The status register reports the status of all operations.
Figure 2: Functional Block Diagram
Address Register
x8
/
x16
IO[7:0] / IO[15:0]
Status Register
I/O
Control
Column
Decoder
Row Decoder
Command Register
ALE
CE#
Command
&
Control
WP#
RE#
CLE
WE#
NAND
Memory
Array
High Voltage Generator
Page Buffer
RDY_BSY#
R/B#
Memory Array Architecture & Addressing
Figure 3: Memory Array Architecture
Block 0
x8:
Page = 2,048 + 64 bytes = 2,112 bytes
1 block = 64 pages (135,168 bytes)
1Gbit Device = 1024 blocks (138,412,032 bytes)
x16:
Page = 1,024 + 32 words = 1,056 words
1 block = 64 pages (67,54 words)
1Gbit Device = 1024 blocks (69,206,016 words)
Block 1
Block 1022
Block 1023
Data Buffer
Page
Buffer
Cache Buffer
x8 –
x16 –
Revision: F
Bytes
Words
x8 –
x16 –
Bytes
Words
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P a g e 9 | 51
1Gbit x8, x16: NAND Flash Memory
Table 4: Array Addressing Sequence – x8, x16
x8:
Cycle
IO[7]
IO[6]
IO[5]
IO[4]
IO[3]
IO[2]
IO[1]
IO[0]
First
BYTA7
BYTA6
BYTA5
BYTA4
BYTA3
BYTA2
BYTA1
BYTA0
Second
Logic '0'
Logic '0'
Logic '0'
Logic '0'
BYTA11
BYTA10
BYTA9
BYTA8
Third
BA7
BA6
PA5
PA4
PA3
PA2
PA1
PA0
Fourth
BA15
BA14
BA13
BA12
BA11
BA10
BA9
BA8
x16:
Cycle
IO[15:8]
IO[7]
IO[6]
IO[5]
IO[4]
IO[3]
IO[2]
IO[1]
IO[0]
First
Logic '0'
WRDA7
WRDA6
WRDA5
WRDA4
WRDA3
WRDA2
WRDA1
WRDA0
Second
Logic '0'
Logic '0'
Logic '0'
Logic '0'
Logic '0'
Logic '0'
WRDA10
WRDA9
WRDA8
Third
Logic '0'
BA7
BA6
PA5
PA4
PA3
PA2
PA1
PA0
Fourth
Logic '0'
BA15
BA14
BA13
BA12
BA11
BA10
BA9
BA8
Notes:
1.
2.
3.
4.
BYTAx: Byte based Column address, WRDAx: Word based Column address, PAx: Page address, BAx: Block address
Block address concatenated with page address = actual page address
I/O[15:8] are not used during the addressing sequence and must be driven to Logic ‘0’ (Low)
1st and 2nd address cycles form the column Address, whereas 3rd and 4th address cycles form the row address
Status Register Definition
Table 5: Status Register Definition
Status Register
Bits
Name
SR[7]
WRPT
SR[6]
RDY
SR[5]
Function
Default
State
Description
WP# based Device Protection
1
0 = Device is protected - WP# is Low
1 = Device Is not protected - WP# is High
Data Cache Register Ready
Status Bit
1
0 = Data Cache is busy - not ready
1 = Data Cache is not busy - ready
ARDY
Memory Array Ready Status Bit
1
0 = Memory Array is busy - not ready
1 = Memory Array is not busy - ready
SR[4]
RSVD
Reserved for Future Use
0
Reserved for Future Use
SR[3]
RSVD
Reserved for Future Use
0
Reserved for Future Use
SR[2]
RSVD
Reserved for Future Use
0
Reserved for Future Use
SR[1]
PS1
Program Status of the Previous
Command (Cache Program)
0
0 = Program was successful
1 = Program was not successful
SR[0]
PES2
Program and Erase Status of
the Current Command
0
0 = Program or Erase was successful
1 = Program or Erase was not successful
Notes:
1.
2.
3.
4.
SR[6] - RDY: If set to ‘1’, the device is ready for another command and all other status bits are valid. If cleared to ‘0’, then
the last command issued is not yet complete and all other status bits are not valid. When cache operations are in use, this
bit indicates when the Cache buffer is ready to accept new data. R/B# follows RDY (SR[5] indicates if the last command
was complete).
SR[5] – ARDY: If set to ‘1’, all array operations are complete. If cleared to zero, then there is a command being processed
or an array operation in progress.
SR[1] – PS1: This bit is only valid for cache program operations and shows whether the previous operation was a success
or a failure. This bit is not valid until after the second 15h command or the 10h command has been transferred in a Cache
program sequence.
SR[0] – PES2: This bit is valid for program and erase operations and shows whether the operation was a success or a
failure. During cache program operations, this bit is only valid when ARDY is set to ‘1’.
Revision: F
Axia Memory Technology
P a g e 10 | 51
1Gbit x8, x16: NAND Flash Memory
Identification Definition (Address 00h)
Table 6: Device Identification Definition (Address 00h)
Byte
#
0
1
2
Options
Manufacturer's
ID
Device ID
Device
Characteristics
Bit
7
1
Bit
6
0
Bit
5
1
Bit
4
0
Bit
3
1
Bit
2
1
Bit
1
0
Bit 0
Values
1
ADh
1Gbit, x8, 3.3V
1
1
1
1
0
0
0
1
F1h
1Gbit, x16, 3.3V
1
1
0
0
0
0
0
1
C1h
Internal Device # 1
0
0
Internal Device # 2
0
1
x8 /x16
↓
80h/80h
Internal Device # 4
1
0
Internal Device # 8
1
1
Page Size - 1KB
0
0
Page Size - 2KB
0
1
Page Size - 4KB
1
0
Page Size - 8KB
1
1
MID
Cell Type - 2 LEVEL
0
0
Cell Type - 4 LEVEL
0
1
Cell Type - 8 LEVEL
1
0
Cell Type - 16 LEVEL
1
1
Simultaneous Programmed
Pages - 1
Simultaneous Programmed
Pages - 2
Simultaneous Programmed
Pages - 4
Simultaneous Programmed
Pages - 8
Interleaved Programming - Not
Supported
Interleaved Programming Supported
Cache Program - Not
Supported
Cache Program - Supported
3
Array
Architecture
Interface Type
Access Time
Revision: F
0
0
0
1
1
0
1
1
0
1
0
1
Spare Area Size - 8 bytes /
512 bytes
Spare Area Size - 16 bytes /
512 bytes
Block Size - 64KB
0
0
Block Size - 128KB
0
1
Block Size - 256KB
1
0
Block Size - 512KB
1
1
x8 /x16
↓
1Dh/5Dh
0
1
x8
0
x16
1
45ns
0
0
25ns
0
1
Axia Memory Technology
P a g e 11 | 51
1Gbit x8, x16: NAND Flash Memory
Byte
#
Options
Reserved for Future Use
Bit
7
1
Reserved for Future Use
1
Bit
6
Bit
5
Bit
4
Bit
3
0
Bit
2
Bit
1
Bit 0
Values
1
Identification Definition (Address 20h)
Table 7: Device Identification Definition (Address 20h)
Byte #
Option
Values
0
1
2
3
"O"
"N"
"F"
"I"
4Fh
4Eh
46h
49h
Parameter Page Structure & Values
Table 8: Parameter Page Structure & Values
Byte #
O/M
Description
Values
Revision Information & Features Block
0-3
M
Signature "O" "N" "F" "I"
4Fh, 4Eh, 46h, 49h
4-5
M
Revision Number
02h, 00h
6-7
M
Features Supported
Bit #
Value
0
1 = Supports 16-bit Data bus
1
1 = Supports multiple LUN operations
2
1 = Supports non-sequential page programming
3
1 = Supports interleaved operations
4
1 = Supports odd to even page Copyback
5 - 15
0 = Reserved
14h, 00h
8-9
M
Optional Commands Supported
Bit #
Value
0
1 = Supports Page Cache Program
1
1 = Supports Read Cache
2
1 = Supports Get/Set features
3
1 = Supports Read Status Enhanced
4
1 = Supports Copyback
5
1 = Supports Read Unique ID
6 - 15
0 = Reserved
33h, 00h
Reserved (0)
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h
10- 31
Manufacturer's Information Block
32 - 43
M
Manufacturer's ID (12 ASCII Characters)
Revision: F
Axia Memory Technology
48h, 59h, 4Eh, 49h,
58h, 20h, 20h, 20h,
20h, 20h, 20h, 20h
P a g e 12 | 51
1Gbit x8, x16: NAND Flash Memory
Byte #
O/M
44 - 63
M
Device Model (20 ASCII Characters)
48h, 32h, 37h, 55h,
31h, 47h, 38h, 46h,
32h, 43h, 4Bh, 41h,
2Dh, 42h, 4Dh, 20h,
20h, 20h, 20h, 20h
64
M
JEDEC Manufacturer's ID
ADh
65 - 66
O
Date Code
00h, 00h
Reserved (0)
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h
67 - 79
Description
Values
Memory Organization Block
80 - 83
M
Number of Data Bytes per Page (2048 Bytes)
00h, 08h, 00h, 00h
84 - 85
M
Number of Spare Bytes per Page (64 Bytes)
40h, 00h
86 - 89
M
Number of Data Bytes per Partial Page (512 Bytes)
00h, 00h, 00h, 00h
90 - 91
M
Number of Spare Bytes per Partial Page (16 Bytes)
00h, 00h
92 - 95
M
Number of Pages per Block (64 Pages)
40h, 00h, 00h, 00h
96 - 99
M
Number of Blocks per Logical Unit (LUN) (1024)
00h, 04h, 00h, 00h
100
M
Number of Logical Units (LUNs)
01h
101
M
Number of address cycles
Bit #
Value
0-3
Row Address Cycles
4-7
Column Address Cycles
22h
102
M
Number of Bits per Cell
01h
103 - 104
M
Bad Blocks Number per LUN (20)
20h, 00h
105 - 106
M
Block Endurance (50K)
05h, 04h
107
M
Guaranteed Valid Blocks at Beginning of Device
01h
108 - 109
M
Block Endurance for Guaranteed Valid Blocks
05h, 04h
110
M
Number of Programs per Page
04h
111
M
Partial Programming Attributes
Bit #
Value
0
1 = Partial Page programming has Constraints
1-3
1 = Reserved (0)
4
1 = Partial Page Layout
5-7
0 = Reserved
00h
112
M
Number of Bits ECC Correctability
04h
113
M
Number of Interleaved Address Bits
Bit #
Value
0-3
Number of Interleaved Address Bits
4-7
Reserved (0)
00h
114
M
Interleaved Operation Attributes
Bit #
Value
0
Overlapped / concurrent Interleaving Support
1
1 = No Block Address Restrictions
2
1 = Program Cache Supported
3
Address Restrictions for Program Cache
4-7
0 = Reserved
00h
Revision: F
Axia Memory Technology
P a g e 13 | 51
1Gbit x8, x16: NAND Flash Memory
Byte #
O/M
115 - 127
Description
Reserved (0)
Values
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h
Electrical Parameter Block
128
M
I/O Pin Capacitance (10pF)
0Ah
129 - 130
M
Timing Mode Support
Bit #
Value
0
1 = Supports Timing mode 0
1
1 = Supports Timing mode 1
2
1 = Supports Timing mode 2
3
1 = Supports Timing mode 3
4
1 = Supports Timing mode 4
5
1 = Supports Timing mode 5
6 - 15
0 = Reserved
1Fh, 00h
131 - 132
M
Program Cache Timing Mode Support
Bit #
Value
0
1 = Supports Timing mode 0
1
1 = Supports Timing mode 1
2
1 = Supports Timing mode 2
3
1 = Supports Timing mode 3
4
1 = Supports Timing mode 4
5
1 = Supports Timing mode 5
6 - 15
0 = Reserved
1Fh, 00h
133 - 134
M
tPROG Maximum Page Program Time (700 μs)
BCh, 02h
135 - 136
M
tBERS Maximum Block Erase Time (10000 μs)
10h, 27h
137 - 138
M
tR Maximum Page Read Time (25 μs)
19h, 00h
Reserved (0)
3Ch, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h
139 - 163
Vendor Block
164 - 165
M
Vendor Specific Revision Number
Revision: F
Axia Memory Technology
00h, 00h
P a g e 14 | 51
1Gbit x8, x16: NAND Flash Memory
Byte #
O/M
166 - 253
Description
Values
Vendor Specific
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,
00h, 00h, 00h
82h, BCh
254 - 255
M
Integrity CRC
256 - 511
M
Value of Bytes 0 - 255
Not Available
512 - 767
M
Value of Bytes 0 - 255
Not Available
768 +
O
Additional Redundant Parameter Pages
Not Available
Redundant Parameter Pages
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1Gbit x8, x16: NAND Flash Memory
Bus Interface
As mentioned above, the I/O bus on the device is multiplexed. Commands, addresses and data input/output
all share the same I/O pins. Commands and addresses are always supplied on I/O[7:0]. Data uses I/O [7:0]
for x8 configuration and uses I/O[15:0] for x16 configuration.
The read, program or erase command sequences typically consist of a command input cycle, two or four
address input cycles, and one or more data cycles, either input or output.
Table 9: Device Modes Selection
Mode
CE#
CLE
ALE
WE#
RE#
WP#
I/O[x]
Standby
VIH
VIH / VIL
VIH / VIL
VIH / VIL
VIH / VIL
VCC / VSS
VIH / VIL
Command Input
VIL
VIH
VIL
↑
VIH
VIH
Data
Address Input
VIL
VIL
VIH
↑
VIH
VIH
Data
Data Input
VIL
VIL
VIL
↑
VIH
VIH
Data
Data Output
VIL
VIL
VIL
VIH
↓
VIH / VIL
Data
Write Protect
VIH / VIL
VIH / VIL
VIH / VIL
VIH / VIL
VIH / VIL
VIL
VIH / VIL
Notes:
1.
VIH = High (Logic ‘1’), VIL = Low (Logic ‘0’)
Standby
The device enters standby when CE# pin is driven VIH (High). This helps reduce power consumption. In
standby mode, all I/Os are tri-stated (High-Z).
Note: The device enters standby if CE# goes High and the device is not busy (no program/erase operations
in progress).
Busy
The device enters busy when program, erase or read operations are initiated. The device returns to Standby
after the completion of the operation. During busy state, only RESET (FFH) and READ STATUS
REGISTER (70h) commands are accepted by the device.
Table 10: Recommended Signal Selections During Busy
Mode
CE#
CLE
ALE
WE#
RE#
WP#
I/O[x]
VIL
VIL
VIL
VIH
VIH
VIH / VIL
VIH / VIL
Busy Period (Program)
VIH / VIL
VIH / VIL
VIH / VIL
VIH / VIL
VIH / VIL
VIH
VIH / VIL
Busy Period (Erase)
VIH / VIL
VIH / VIL
VIH / VIL
VIH / VIL
VIH / VIL
VIH
VIH / VIL
Busy Period (READ)
Notes:
1. VIH = High (Logic ‘1’), VIL = Low (Logic ‘0’)
Device Protection (Write Protect WP#)
The write protect# (WP#) signal enables or disables program and erase operations within the Flash device.
When WP# is Low, program and erase operations are disabled. When WP# is High, program and erase
operations are enabled.
It is recommended that the host drive WP# Low during power-on until VCC is stable to prevent inadvertent
program and erase operations.
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1Gbit x8, x16: NAND Flash Memory
WP# must be transitioned only when the device is in Standby and prior to beginning a command sequence.
After a command sequence is complete and the device is ready, WP# can be transitioned. After WP# is
transitioned, the host must wait tWW before issuing a new command.
The WP# signal is always an active input, even when CE# is High. This signal should not be multiplexed
with other signals.
Command Input
A command is entered from I/O[7:0] to the command register on the rising edge of WE# when CE# is Low,
ALE is Low, CLE is High, and RE# is High. Most commands are ignored if the device is busy (R/B# = 0);
however, some commands, including READ STATUS (70h), are accepted. Moreover, for commands that
starts a modify operation (program/erase), WP# must be high. For devices with a x16 interface, I/O[15:8]
must be written with zeros when a command is issued.
Figure 4: Command Latch Cycle
CE#
CLE
ALE
Logic
WE#
Logic
RE#
tDS
IOx
tDH
Command
Logic
R/B#
Don t
Care
Address Input
An address is entered to the address register on the rising edge of WE# when CE# is Low, ALE is High,
CLE is Low, and RE# is High. Bits that are not part of the address space must be Low (see Array Addressing
Sequences). The number of address cycles required depends on the command (refer to the command
descriptions to determine addressing requirements). Addresses are input on I/O[7:0] on x8 devices and on
I/O[15:0] on x16 devices. Moreover, for commands that start a modify operation (program/erase), WP#
must be high.
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1Gbit x8, x16: NAND Flash Memory
Figure 5: Address latch Cycle
CE#
CLE
Logic
ALE
WE#
Logic
RE#
tDS
tDH
Row/Column
Address
IOx
Logic
R/B#
Don t
Care
Data Input
Data insertion is serial and timed by WE# cycles. Data is entered to the page buffer (cache register or
data register) on the rising edge of WE# when CE# is Low, ALE is Low, CLE is Low, and RE# is High.
Data input is ignored if the device is busy (R/B# = 0). Data is input on I/O[7:0] on x8 devices and on
I/O[15:0] on x16 devices.
Figure 6: Data Input Cycle
CE#
CLE
ALE
tALS
Logic
tWC
WE#
tWH
tWH
tWP
tWP
Logic
RE#
tDS
IOx
tDH
DIN_M
tDS
tDH
DIN_M+1
tDS
tDH
DIN_M+2
Logic
R/B#
Don t
Care
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1Gbit x8, x16: NAND Flash Memory
Data Output
Data can only be output if the device is not busy and is in the READ state. Data output is supported following
a READ operation from the NAND Flash array. Data is output from the cache register on the falling edge
of RE# when CE# is Low, ALE is Low, CLE is Low, and WE# is High. Data is output on I/O[7:0] on x8
devices and on I/O[15:0] on x16 devices.
Figure 7: Data Output Cycle
tCHZ
CE#
tCOH
CLE
Logic
ALE
Logic
Logic
WE#
tRC
RE#
tRP
tREH
tREA
IOx
High-Z
tREH
tREA
DOUT_M
tRHZ
tREA
DOUT_M+1
DOUT_M+2
tRR
R/B#
Don t
Care
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1Gbit x8, x16: NAND Flash Memory
Command Set
Table 11: Command Set
Command
Cycle
#1
Operation
Address
Cycles
Data Input
Cycles
Command
Cycle
#2
Command Accepted
Device Busy
N/A
Yes
Reset Operation
RESET
FFh
0
0
Identification Operations
READ ID
90h
1
0
N/A
No
READ UNIQUE ID
EDh
1
0
N/A
No
READ PARAMETER PAGE
ECh
1
0
N/A
No
0
N/A
Yes
Status Register Operation
READ STATUS REGISTER
70h
0
Read Operations
READ MODE
00h
0
0
N/A
No
READ PAGE
READ PAGE CACHE
(Start)
READ PAGE CACHE
(End)
READ PAGE CACHE
(Random)
READ RANDOM DATA
00h
4
0
30h
No
31h
0
0
N/A
No
3Fh
0
0
N/A
No
00h
4
0
31h
No
05h
2
0
E0h
No
PROGRAM PAGE
80h
4
Yes
10h
No
80h
4
Yes
10h
No
80h
4
Yes
15h
No
85h
2
Yes
N/A
No
Yes
10h
No
0
D0h
No
Program Operations
PROGRAM PAGE CACHE
(End)
PROGRAM PAGE CACHE
(Start)
RANDOM DATA INPUT
Re-Program Operations
PROGRAM PAGE 2
(RE-PROGRAM)
8Bh
ERASE BLOCK
60h
5
Erase Operation
2
Data Move Operations (Internal)
READ FOR DATA MOVE
PROGRAM FOR DATA MOVE
OTP REGION ENTRY
00h
4
0
35h
No
85h
4
Optional
10h
No
One-Time Programmable (OTP) Region Operations
29h-17h0
0
N/A
04h-19h
No
RESET Operation (FFh)
The RESET command (FFh) places the NAND Flash device into the standby mode and aborts any
command sequence in progress. Read, program, and erase commands can be aborted while the device is
in the busy state using the RESET command. The contents of the memory location being programmed, or
the block being erased are no longer valid - the data may be partially erased or programmed and is invalid.
The command register is cleared and is ready for the next command. The data register and cache register
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1Gbit x8, x16: NAND Flash Memory
contents are marked invalid. The status register contains the value E0h when WP# is High; otherwise it is
written with a 60h value. If the device is already in RESET state a new reset command will not be accepted
by the command register. R/B# goes Low for tRST during which the device completes the reset operation.
Figure 8: RESET Operation
CE#
CLE
ALE
Logic
WE#
Logic
RE#
tDS
IOx
tDH
FFh
tWB
R/B#
READ ID Operation (90h)
The READ ID (90h) command is used to read the product identification information programmed into the
NAND Flash device. This command is accepted when the device is in Standby mode. Writing 90h to the
command register puts the device in read ID mode. The device stays in this mode until another valid
command is issued.
When the 90h command is followed by a 00h address cycle, the device returns a 4-byte identifier code that
includes the manufacturer ID, device configuration, and part-specific information. Reading beyond the four
bytes yields indeterminate data.
When the 90h command is followed by a 20h address cycle, the device returns the 4-byte ONFI identifier
code. Reading beyond the four bytes yields indeterminate data.
Note: Table 6 provides the ID values.
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1Gbit x8, x16: NAND Flash Memory
Figure 9: READ ID Operation
CE#
CLE
tAR
ALE
WE#
tWHR
RE#
tDS
IOx
tDH
90h
tDS
tDH
00h / 20h
Byte 0
Byte 1
Byte 2
Byte 3
READ UNIQUE ID Operation (EDh)
The READ UNIQUE ID (EDh) command is used to read the ONFI Unique identification information
programmed into the NAND Flash device. This command is accepted when the device is in Standby mode.
Writing EDh to the command register puts the device in read UNIQUE ID mode. The device stays in this
mode until another valid command is issued.
When the EDh command is followed by a 00h address cycle, the device returns 16-bytes of a unique value.
The next 16-bytes are the bit-wise complement of the unique value. The host can verify that the Unique ID
was read correctly by performing an XOR of the two values; result should be all ones. The host must monitor
the R/B# pin or wait for the maximum data transfer time (tR) before reading the Unique ID data.
Table 12: Unique ID Data Description
Bytes
0-15
16-31
32-47
48-63
64-79
80-95
96-111
112-127
128-143
144-159
160-175
176-191
192-207
208-223
224-239
240-255
Revision: F
Information
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
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1Gbit x8, x16: NAND Flash Memory
Bytes
256-271
272-287
288-303
304-319
320-335
336-351
352-367
368-383
384-399
400-415
416-431
432-447
448-463
464-479
480-495
496-511
Information
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Unique ID
Unique ID Complement
Figure 10: READ Unique ID Operation
CE#
CLE
ALE
WE#
tWHR
RE#
tDS
IOx
tDH
EDh
tDS
tDH
Unique ID
Byte 0
00h
tWB
Unique ID
Byte 1
Unique ID
Byte 15
tR
R/B#
READ PARAMETER PAGE Operation (ECh)
The READ PARAMETER PAGE (ECh) command is used to read the ONFI parameter page which describes
the device’s organization, features, timings and other behavioral parameters. These values are static and
cannot be altered by the user. The READ PARAMETER PAGE command is accepted by the device when
it is in Standby mode.
Writing ECh to the command register puts the device in read parameter page mode. It stays in this mode
until another valid command is issued. When the ECh command is followed by an 00h address cycle, the
device goes busy for tR. If desired, the RANDOM DATA OUTPUT (05h-E0h) command can be used to
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1Gbit x8, x16: NAND Flash Memory
change the location of data output. If the READ STATUS (70h) command is used to monitor for command
completion, the READ MODE (00h) command must be used to re-enable data output mode.
Figure 11: Parameter Read Operation
CE#
CLE
ALE
WE#
RE#
tDS
IOx
tDH
ECh
tDS
tDH
Param
Byte 0
00h
Param
Byte 1
Param
Byte 255
tR
R/B#
READ STATUS REGISTER Operation (70h)
The device contains a Status Register which may be read to find out whether read, program or erase
operation is completed, and whether the program or erase operation is completed successfully. The device
provides its status through its 8-bit status register. After the READ STATUS REGISTER (70h) command is
issued, status register output is enabled. The contents of the status register are returned on I/O[7:0] for
each data output request (toggle RE#).
When the status register output is enabled, changes in the status register are seen on I/O[7:0] as long as
CE# and RE# are Low; it is not necessary to toggle RE# to see the status register update. The command
register remains in Status Read mode until other commands are issued to it. Therefore, if the status register
is read during a random read cycle, the read command (00h) should be given before starting read cycles.
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1Gbit x8, x16: NAND Flash Memory
Figure 12: Read Status Register Operation
tCEA
CE#
tCLR
CLE
ALE
WE#
tWHR
RE#
tDS
IOx
tDH
70h
tIR
Status
Output
Don t
Care
READ MODE Operation (00h)
Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing
00h and 30h to the command register along with four address cycles. Two types of read operations are
available: random read and serial page read. The random read mode is enabled when the page address is
changed. The repetitive high to low transitions of the RE# clock make the device output the data starting
from the selected column address up to the last column address. The device may output random data in a
page instead of the consecutive sequential data by writing random data output command. Random data
output can be operated multiple times regardless of how many times it is done in a page. Any operation
other than read or random data output causes the device to exit read mode.
The READ MODE (00h) command enables data output and disables status output after a READ operation
(00h-30h, 00-31h) has been modified with a status operation (70h). This command is accepted by the
device when it is ready (RDY = 1, ARDY = 1). It is also accepted by the device during READ PAGE CACHE
(31h, 00h-31h) operations (RDY = 1 and ARDY = 0).
READ PAGE Operation (00h – 30h)
The READ PAGE (00h–30h) command copies a page (x8: 2112 bytes, x16: 1056 words) from the NAND
Flash array to its cache register and enables data output. This command is accepted by the device when it
is ready (RDY = 1, ARDY = 1).
To read a page from the NAND Flash array, the host must first write the 00h command to the command
register, followed by writing 4 address cycles to the address registers, and conclude with writing the 30h
command. The device will go busy (RDY = 0, ARDY = 0) for t R as data is transferred. To determine the
progress of the data transfer, the host can monitor the device’s R/B# signal or, alternatively, the READ
STATUS REGISTER operation (70h) can be used. If the READ STATUS REGISTER operation is used to
monitor the progress, the host must disable status output and enable data output by issuing the READ
MODE (00h) command when the device gets ready (RDY = 1, ARDY = 1).
As mentioned above, two types of read operations are available: random read and serial page read. During
data output the READ RANDOM DATA (05h-E0h) command can be issued if random data output from the
page is desired. Otherwise, the data output is sequential.
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Revision: F
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
tDS
00h
tDH
Column
Address 0
Column
Address 1
tWC
tDH
Row
Address 0
tDS
tDH
Row
Address 1
tDS
tDS
30h
tDH
tWB
tR
tRR
tAR
tCLR
DOUT 0
tWP
tRC
DOUT 1
DOUT n
tRHZ
tCOH
tCHZ
Don t
Care
1Gbit x8, x16: NAND Flash Memory
Figure 13: Read Page Operation
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1Gbit x8, x16: NAND Flash Memory
Figure 14: Read Page Operation Overview
CB: Page N
Page N To I/Os
DB: Page N
Page N
Memory Array
CMD: 30h
A data transfer operation from the cell array to the Cache
Buffer (CB) via Data Buffer (DB) starts on the rising edge of
WE# in the 30h command input cycle (after the address
information has been latched in). The device will be in the
Busy state during this transfer period.
READ PAGE CACHE Start Operation (31h)
The READ PAGE CACHE Start (31h) command allows reading a page from the cache register while
another page is simultaneously loaded from the Flash array into the data register. A READ PAGE (00h–
30h) command must be issued prior to the READ PAGE CACHE Start command. Operationally, the READ
PAGE CACHE Start (31h) command reads the next sequential page within a block into the data register
(while the previous page is output from the cache register). This command is accepted by the device when
it is ready (RDY = 1, ARDY = 1). It is also accepted during READ PAGE CACHE (31h, 00h-31h) operation
(RDY = 1 and ARDY = 0).
To issue this command, write 31h to the command register. After this command is issued, R/B# goes Low
and the device is busy (RDY = 0, ARDY = 0) for tRBSY. After tRBSY, R/B# goes High (RDY = 1, ARDY = 0),
indicating that the cache register is available and that the specified page is being copied from the NAND
Flash array to the data register. At this point, data can be output from the cache register beginning at column
address 00h. The READ RANDOM DATA (05h-E0h) command can be used to change the column address
of the data being output from the cache register.
The READ PAGE CACHE Start (31h) command must not cross block boundaries. The host can enter the
address of the next page to be read from the Flash array. If the host does not enter an address to retrieve,
the next sequential page is read. When no more pages are to be read, the final page is copied into the page
register by issuing the READ PAGE CACHE End (3Fh) command.
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R/B#
IOx
RE#
WE#
ALE
CLE
CE#
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
tRC
00h
tDH
tRHW
Column
Address 0
DOUT n
Page Address M
tWP
tDS
tDS
3Fh
tDH
Column
Address 1
tWB
tWC
tDH
tWHR
tRBSY
tRR
tCLR
tDH
DOUT 0
Row
Address 1
tDS
tWP
Column Address 0
Page Address M
Row
Address 0
tDS
tRC
30h
tDH
tCHZ
tCOH
Don t
Care
DOUT n
tRHZ
Page Address M+1
tDS
tWB
tR
tDS
31h
tDH
tWB
tWHR
tRBSY
tRR
R
tCL
Column Address 0
DOUT 0
1Gbit x8, x16: NAND Flash Memory
Figure 15: Read Page Cache Start Operation
P a g e 28 | 51
1Gbit x8, x16: NAND Flash Memory
Figure 16: Read Page Cache Start Operation Overview
Page N To I/Os
CB: Page N
CB: Page N+1
DB: Page N
DB: Page N+1
DB: Page N+2
Page N
Page N+2 To I/Os
Page N+1 To I/Os
Cache Buffer
Page N+1
CB: Page N+2
Page N+2
Memory Array
Memory Array
Memory Array
Memory Array
CMD: 30h
CMD: 31h
CMD: 31h
CMD: 3Fh
When 31h command is issued to the device, the data content of the next page is transferred to the Data Buffer (DB) during serial output of the Cache Buffer (CB).
•
•
•
•
•
•
•
During Normal read, Data is transferred from Page N to CB through DB. During this time period, the device outputs Busy state for tR.
After the Ready/Busy returns to Ready, 31h command is issued and data is transferred to DB from CB again. This data transfer takes tRBSY .
Data of Page N+1 is transferred to DB while the data of Page N in CB can be read out.
The 31h command makes data of Page N+1 transfer to CB from DB after the completion of the transfer from cell to DB. The devic e outputs Busy state for tRBSY .
Data of Page N+2 is transferred to DB while the data of Page N +1 in CB can be read out by RE# clock simultaneously.
The 3Fh command makes the data of Page N+2 transfer to the CB from the DB after the completion of the transfer to DB. The device outputs Busy state for tRBSY .
Data of Page N+2 in CB can be read out.
READ PAGE CACHE Random Operation (00h - 31h)
The READ PAGE CACHE RANDOM (00h-31h) command allows reading a page from the cache register
while another page is simultaneously loaded from the Flash array into the data register. However, the page
address can be randomly selected (not sequential). A READ PAGE (00h – 30h) command must be issued
prior to the READ PAGE CACHE RANDOM command. This command is accepted by the device when it is
ready (RDY = 1, ARDY = 1). It is also accepted during READ PAGE CACHE (31h, 00h-31h) operation
(RDY = 1 and ARDY = 0).
To issue this command, write 00h to the command register, followed by writing 4 address cycles to the
address register and conclude by writing 31h to the command register. Note that the column address in the
address specified is ignored. After this command is issued, R/B# goes Low and the device is busy (RDY =
0, ARDY = 0) for tRBSY. After tRBSY, R/B# goes High (RDY = 1, ARDY = 0) indicating that the cache register
is available and that the specified page is being copied from the NAND Flash array to the data register.
The data in the cache register can be read beginning at column address 0. The READ RANDOM DATA
(05h-E0h) command can be used to change the column address of the data being output from the cache
register.
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Axia Memory Technology
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
tDH
00h
Page Address N
Row
Address 1
tDS
tDS
tDH
tDS
31h
Column
Address 0
tDH
tWB
tWHR
tRBSY
Column
Address 1
tRR
tWC
tDH
tWP
Column Address 0
DOUT 0
tDS
tDH
tRC
Page Address M
Row
Address 1
Page Address M
Row
Address 0
tDS
tRHW
30h
DOUT n
tDS
tDH
tWB
tDS
3Fh
tR
tDH
tWB
tDH
tRBSY
00h
tWHR
tDS
tRR
tWP
tRC
tDH
Don t
Care
DOUT n
tRHZ
tCOH
tCHZ
Page Address N
Row
Address 0
tDS
Page Address N
Column
Address 1
Column Address 0
DOUT 0
Column
Address 0
tWC
1Gbit x8, x16: NAND Flash Memory
Figure 17: Read Page Cache Random Operation
P a g e 30 | 51
1Gbit x8, x16: NAND Flash Memory
READ PAGE CACHE End Operation (3Fh)
The READ PAGE CACHE End (3Fh) command ends the read page cache sequence and copies a page
from the data register to the cache register. This command is accepted by the device when it is ready (RDY
= 1, ARDY = 1). It is also accepted by the die (LUN) during READ PAGE CACHE (31h, 00h-31h) operations
(RDY = 1 and ARDY = 0).
To issue the READ PAGE CACHE End (3Fh) command, write 3Fh to the command register. After this
command is issued, R/B# goes LOW and device is busy (RDY = 0, ARDY = 0) for t RBSY. After tRBSY, R/B#
goes HIGH and the device is ready (RDY = 1, ARDY = 1). At this point, data can be output from the cache
register, beginning at column address 0. The READ RANDOM DATA (05h-E0h) command can be used to
change the column address of the data being output from the cache register.
READ RANDOM DATA Operation (05h – E0h)
The READ RANDOM DATA (05h-E0h) command changes the column address of the selected cache
register and enables data output from the device. This command is accepted when the device is ready
(RDY = 1; ARDY = 1) or during CACHE READ operations (RDY = 1; ARDY = 0).
Writing 05h to the command register, followed by two column address cycles containing the column
address, followed by the E0h command, puts the device into data output mode. After the E0h command
cycle is issued, the host must wait at least tWHR before requesting data output. The device stays in data
output mode until another valid command is issued.
Figure 18: Read Random Operation
CE#
CLE
tCLR
ALE
tWC
WE#
tRHW
tWHR
tRC
tWP
RE#
tDS
IOx
DOUT n-1
DOUT n
tDH
05h
tREA
Column
Address 0
Column
Address 1
E0h
tREA
DOUT m
DOUT
m+1
DOUT
m+k
R/B#
PROGRAM PAGE Operation / PROGRAM PAGE CACHE End (80h – 10h)
As mentioned in the architecture section, programming is page based. Pages must be programmed
sequentially within a block. However, the device also allows multiple partial page programming in a single
page program cycle; Partial page programming of consecutive bytes (1 to 2112) or words (1 to 1056) in a
single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 4; for example, 2 times for main array
(1time/512byte) and 2 times for spare array (1time/16byte).
The PROGRAM PAGE (80h-10h) command enables the host to input data to a cache register and moves
the data from the cache register to the addressed block and page in the Flash array. This command is
accepted by the device when it is ready (RDY = 1, ARDY = 1). It is also accepted when the device is busy
with a PROGRAM PAGE CACHE (80h-15h) operation (RDY = 1, ARDY = 0). Note that (80h-10h) command
is also used to end the program page cache operation.
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1Gbit x8, x16: NAND Flash Memory
To program an addressed page in the Flash array, write 80h to the command register. Write 4 address
cycles containing the column address and row address. Data input cycles follow. Serial data is input
beginning at the column address specified. At any time during the data input cycle the RANDOM DATA
INPUT (85h) and PROGRAM FOR DATA MOVE (85h) commands can be issued. When data input is
complete, write 10h to the command register. The device will go busy (RDY = 0, ARDY = 0) for tPROG as
data is programmed.
The internal program state controller automatically executes the algorithms and timings necessary to
program and verify, thereby freeing the system controller for other tasks. To determine the progress of the
data transfer, the host can either monitor the device's R/B# signal or, execute the status operation (70h).
When the device is ready (RDY = 1, ARDY = 1), the host should check the status of the Program/Erase
status (PS1/PES2) bit. The internal program verify detects only errors for "1"s that are not successfully
programmed to "0"s.
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Axia Memory Technology
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
80h
DIN m
tDS
tDH
tDS
10h
tDH
Column
Address 0
Column
Address 1
tPRO G
tDH
Row
Address 0
tDS
70h
tWC
tDH
Row
Address 1
tDS
tREA
tDH
Status
Output
Don t
Care
tCOH
Row
Address 2
tDS
tADL
tDS
DIN 0
tDH
1Gbit x8, x16: NAND Flash Memory
Figure 19: Program Page Operation
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1Gbit x8, x16: NAND Flash Memory
Figure 20: Program Page Operation Overview
Data Input From I/Os
CB: Data Input
DB: Data Input
Program / Read / Verify
Selected Page
Memory Array
CMD: 10h
The data is programmed from the Data Buffer (DB) to the
selected page on the rising edge of WE# following input of the
h command. After programming, the programmed data is
transferred back to the DB to be automatically verified by the
device. If the programming does not succeed, the Program/
Verify operation is repeated by the device until success is
achieved or until the maximum programming loop count is
reached.
PROGRAM PAGE CACHE Operation (80h – 15h)
PROGRAM PAGE CACHE is used to improve the program throughput by programing data using the cache
register. Cache program is available only within a block. The PROGRAM PAGE CACHE (80h-15h)
command is an extension of the PROGRAM PAGE (80h-10h) command.
The PROGRAM PAGE CACHE (80h-15h) command enables the host to input data to the cache register;
copies the data from the cache register to the data register; then moves the data register contents to the
memory array. Once the data is copied to the data register, the cache register is available for additional
data using PROGRAM PAGE CACHE (80h-15h) or PROGRAM PAGE (80h-10h) commands. The
PROGRAM PAGE CACHE command is accepted by the device when it is ready (RDY =1, ARDY = 1). It is
also accepted by the device when it is busy with a PROGRAM PAGE CACHE operation (RDY = 1, ARDY
= 0).
To input a page to the cache register, write 80h to the command register. Then write 4 address cycles
containing the column address and row address. Data input cycles follow. Serial data is input beginning at
the column address specified. At any time during the data input cycle the RANDOM DATA INPUT (85h)
and PROGRAM FOR DATA MOVE (85h-10h) commands may be issued. When data input is complete,
write 15h to the command register. The device will go busy (RDY = 0, ARDY = 0) for tPBSY to copy data
from the cache register to the data register, and then to begin the programming operation.
To determine the progress of the data transfer, the host can either monitor the device's R/B# signal or,
execute the READ STATUS REGISTER (70h) command. When the device is busy with a PROGRAM
PAGE CACHE operation (RDY = 1, ARDY = 0), the host must check the status of the PS1 bit to ensure
previous cache operation was successful. If, after t PBSY, the host wants to wait for the PROGRAM PAGE
CACHE operation to complete without issuing PROGRAM PAGE (80h-10h) command, the host should
monitor ARDY bit in the status register until it is 1. The host should then check the status of the PS1 and
PES2 bits for program completion status.
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Axia Memory Technology
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
80h
Column
Address 1
tDS
tWC
tDH
tDH
Page Address N
Row
Address 0
tDS
Column
Address 0
tDH
Row
Address 1
tDS
tADL
Column
Address 1
tDS
tWC
tDH
DIN 0
tDH
Page Address M
Row
Address 0
tDS
tDH
Row
Address 1
tDS
tADL
tDH
DIN 0
DIN m
tDS
tDS
10h
tDH
tPROG
DIN m
tDS
15h
70h
tDH
tREA
tPBSY
Don t
Care
Status
Output
tCOH
tCHZ
tDS
80h
tDH
Column
Address 0
1Gbit x8, x16: NAND Flash Memory
Figure 21: Program Page Cache Operation
P a g e 35 | 51
Revision: F
Page N
Data Input
From I/Os
•
•
•
•
•
•
Page N+1
CB:
CMD: 15h
Memory Array
DB: Data Input M+1
Page N+1
Data Input
From I/Os
CMD: 80h
Memory Array
Page N+2
CB:
CMD: 10h
Memory Array
DB: Data Input M+2
Program / Read / Verify
The programming with CB is terminated by the 10h command. When the device becomes Ready, it shows that the internal programming of the Page N+2 is completed. The device output busy state from the 10h command until t PROG.
Data for Page N+2 is input to the CB while the data of the Page N+1 is being programmed.
CB: Data Input M+2
DB: Data Input M+1
Program / Read / Verify
Issuing the 15h command, the data in the CB is transferred to the DB after the programming of page N is completed. The device output busy state from the 15h command until t PBSY.
Data is programmed to the selected page while the data for page N+1 is input to the CB.
Data is transferred to the DB by the 15h command. During the transfer the Ready/Busy outputs Busy State (t PBSY).
Data for Page N is input to Cache Buffer (CB).
Issuing the 15h command to the device after serial data input initiates the program operation with Data Buffer (DB). Detailed Program Page Cache Operation steps are as follows:
CMD: 80h
CMD: 15h
CMD: 80h
DB: Data Input M
Program / Read / Verify
CB: Data Input M+1
Memory Array
Page N
Data Input
From I/Os
Memory Array
DB:
Memory Array
CB:
DB: Data Input M
CB: Data Input M
1Gbit x8, x16: NAND Flash Memory
Figure 22: Program Page Cache Operation Overview
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1Gbit x8, x16: NAND Flash Memory
RANDOM DATA INPUT Operation (85h)
The RANDOM DATA INPUT (85h) command changes the column address and enables data input. This
command is accepted by the device when it is ready (RDY = 1; ARDY = 1) or during PROGRAM PAGE
CACHE operations (RDY = 1; ARDY = 0). The RANDOM DATA INPUT (85h) command is allowed after the
required address cycles are specified, but prior to the final program command cycle (10h,15h) of the
following commands while data input is permitted: PROGRAM PAGE (80h-10h), PROGRAM PAGE
CACHE (80h-15h),and PROGRAM FOR DATA MOVE (85h-10h).
Writing 85h to the command register, followed by two column address cycles containing the column
address, puts the device into data input mode. After the second address cycle is issued, the host must wait
at least tADL before inputting data. The device stays in data input mode until another valid command is
issued.
Figure 23: Random data Input Operation
CE#
CLE
ALE
tWC
tADL
WE#
RE#
tDS
IOx
tDH
DIN n-1
tDS
tDH
DIN n
tDS
tDS
tDH
85h
Column
Address 0
Column
Address 1
tDH
DIN m
DIN m+1
Random data Input
DIN m+2
10h
Program Command
R/B#
PROGRAM PAGE 2 (RE-PROGRAM) Operation (8Bh – 10h)
The PROGRAM PAGE 2 (8Bh-10h) command allows re-programming of the same data into a new page if
the last PAGE PROGRAM (80h-10h) operation failed. This command is most efficient if the data to be
programmed is not changed. However, if the data needs to be altered, data in cycles can be initiated before
issuing the program confirm “10h” command.
To re-program the loaded data into a new page address in the Flash array, write 8Bh to the command
register. Write 5 address cycles containing the column address and row address of the new page. Data
input cycles follow. Serial data is input beginning at the column address specified. At any time during the
data input cycle the RANDOM DATA INPUT command can be issued. When data entry is complete, write
10h to the command register. The device will go busy (RDY = 0, ARDY = 0) for tPROG as data is programmed.
To determine the progress of the data transfer, the host can either monitor the device's R/B# signal or,
execute the status operation (70h). When the device is ready (RDY = 1, ARDY = 1), the host should check
the status of the Program/Erase status (PS1/PES2) bits.
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Axia Memory Technology
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
tDS
tDS
8Bh
80h
tDH
tDH
Column
Address 0
Column
Address 0
Column
Address 1
Column
Address 1
tWC
tWC
tDS
tDH
tDH
Row
Address 0
tDS
Row
Address 0
tDH
tDH
Row
Address 1
tDS
Row
Address 1
tDS
tADL
tDS
tDH
DIN 0
tDS
10h
tDH
DIN m
tPROG
tDS
10h
tDH
70h
tREA
tPROG
Status
Don t
Care
tCOH
tCHZ
70h
tREA
FAIL !!
Status
E1
1Gbit x8, x16: NAND Flash Memory
Figure 24: Program Page 2 (RE-PROGRAM) Operation
P a g e 38 | 51
1Gbit x8, x16: NAND Flash Memory
ERASE BLOCK Operation (60h – D0h)
The erase operation in the device is done on a block basis. The ERASE BLOCK (60h-D0h) command
erases the specified block in the NAND Flash array. This command is accepted by the device when it is
ready (RDY = 1, ARDY = 1).
To erase a block, write 60h to the command register. Then write two address cycles containing the row
address (the page address is not required). Conclude by writing D0h to the command register. The device
will go busy (RDY = 0, ARDY = 0) for tBERS while the block is erased.
To determine the progress of the data transfer, the host can either monitor the device's R/B# signal or,
execute the READ STATUS REGISTER (70h) command. When the device completes an ERASE Block
operation, the host must check the status of the PES2 bit for erase completion status.
Figure 25: Erase Block Operation
tCHZ
CE#
tCOH
CLE
ALE
tADL
WE#
RE#
tDH
IOx
60h
tDH
Row
Address 0
tDS
tDH
Row
Address 1
tDS
tDH
D0h
Row Address (Block)
Status
Output
70h
tBERS
R/B#
Status Read
tREA
Don
t
Car
e
READ FOR DATA MOVE Operation (00h – 35h)
The READ FOR DATA MOVE (00h-35h) operation working in conjunction with PROGRAM FOR DATA
MOVE (85h-10h) operation provides a very efficient copy-back operation where data stored in one page
can be written to another page without utilizing any of the host’s resources. It is much faster since loading
of the data is not required (if data modifications are not needed).
The READ FOR DATA MOVE (00h-35h) command is functionally identical to the READ PAGE (00h-30h)
command, except that 35h is written to the command register instead of 30h.
It is recommended that the host read the data out of the device to verify the data prior to issuing the
PROGRAM FOR DATA MOVE (85h-10h) command to prevent the propagation of data errors.
PROGRAM FOR DATA MOVE Operation (85h – 10h)
The PROGRAM FOR DATA MOVE (85h-10h) command is functionally identical to the PROGRAM PAGE
(80h-10h) command, except that 85h is written to the command register.
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Revision: F
Axia Memory Technology
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
R/B#
IOx
RE#
WE#
ALE
CLE
CE#
tDH
00h
Row
Address 0
tDS
tDS
tWC
tDH
tDH
Row
Address 1
tDS
tADL
Column
Address 0
tDS
DIN 0
tDH
Column
Address 1
tDH
Row
Address 0
tDS
Optional Data
Enter
tWC
tDH
DIN m
Row
Address 1
tDS
tDS
10h
tDH
tDS
35h
tDH
tWB
tPROG
tR
70h
85h
tREA
tDS
tDH
Don t
Care
Status
Output
tCOH
tCHZ
Column
Address 0
1Gbit x8, x16: NAND Flash Memory
Figure 26: Read/Program For Data Move Operation
P a g e 40 | 51
1Gbit x8, x16: NAND Flash Memory
Figure 27: Read/Program For Data Move Operation Overview
Page K To I/Os
CB: Page K
DB: Page K
Data Input From I/Os
For Page N
CB: Data Input N
CB:
DB:
DB: Data Input N
Program / Read / Verify
Page K
Memory Array
Page N
Memory Array
Page N
CMD: 35h
CMD: 85h
Memory Array
CMD: 10h
Data Move operation from Page K to Page N is as following:
1 Data for Page K is transferred to the Cache Buffer (CB) - Read for Data Move.
2 Data for Page K is read out.
3 Data Move to Page address N is input and any data updates are implemented.
4 CB for Page N is transferred to the Data Buffer (DB).
5 By issuing the 10h command, the data in the DB is programmed to Page N – Program for Data Move
ONE-TIME PROGRAMMABLE (OTP) ENTRY Operation (29h-17h-04h-19h)
The device contains a one-time programmable (OTP) area, which is accessed by writing 29h-17h-04h-19h
to the command register. The device is then ready to accept READ PAGE (00h-30h) and PROGRAM PAGE
(80h-10h) commands. The OTP area is of a single block size (64 pages), and hence only row addresses
between 00h and 3Fh are allowed. The host must issue the Reset command to exit the OTP area and
access the normal flash array. The ERASE BLOCK (60h-D0h) command is not allowed in the OTP area.
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1Gbit x8, x16: NAND Flash Memory
Device Initialization
When powering up, the following procedure is required to initialize the device correctly:
• Ramp VCC.
• Drive WP# Low during power-up until VCC is stable
• RESET operation is required after VCC ramps up and must be the first command issued. The host
must wait 5ms after VCC reaches VCC (minimum) before issuing RESET.
• The device is now initialized and ready for normal operation (after RESET busy time tRST has
elapsed - this can be monitored by polling R/B# or issuing the READ STATUS (70h) command).
Figure 28: Power-On Behavior
Voltage
VCC
(Maximum)
VCC
(Minimum)
5ms
Time
0V
Issue RESET
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1Gbit x8, x16: NAND Flash Memory
Figure 29: Power-On Behavior (Continued)
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1Gbit x8, x16: NAND Flash Memory
Device Power-Down
When powering down, the following procedure is required to initialize the device correctly:
• Ramp down VCC.
• Drive WP# Low during power-down before VCC reaches VCC (minimum) and goes below.
Figure 30: Power-Down Behavior
Voltage
VCC
(Maximum)
VCC
(Minimum)
Time
0V
Figure 31: Power-Down Behavior (Continued)
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1Gbit x8, x16: NAND Flash Memory
Electrical Specifications
Table 13: Absolute Maximum Ratings
Voltage on any pin with respect to VSS
Parameter / Condition
Voltage Input
VCC Supply Voltage
Storage Temperature
Short circuit output current, I/Os
Minimum
-0.6
-0.6
-65.0
-
Maximum
4.6
4.6
150.0
5.0
Units
V
V
°C
mA
Table 14: Recommended Operating Conditions
Parameter / Condition
Operating Temperature
VCC Supply Voltage
Minimum
Maximum
Units
Industrial
-40.0
85.0
°C
3.0V
2.7
3.6
V
0.0
0.0
V
VSS Supply Voltage
Table 15: Pin Capacitance
Parameter
Test Conditions
Symbol
Maximum
Units
Input Pin Capacitance
TEMP = 25°C; f = 1 MHz; VIN = 0V
CIN
10.0
pF
Input / Output Pin Capacitance
TEMP = 25°C; f = 1 MHz; VIN = 0V
CINOUT
10.0
pF
Table 16: DC Characteristics
Parameter
Symbol
Test Conditions
Read Current (Seq)
ICC1
tRC = 50ns, CE#=VIL,
IOUT=0mA
Program Current
3.0V Device (2.7V-3.6V)
Minimum
Typical
Maximum
Units
-
15.0
30.0
mA
ICC2
-
15.0
30.0
mA
Erase Current
ICC3
-
15.0
30.0
mA
Standby Current (TTL)
ICC4
-
-
1.0
mA
Standby Current (CMOS)
ICC5
-
10.0
50.0
µA
-
-
±10.0
µA
-
-
±10.0
µA
Input Leakage Current
ILI
CE#=VIH,
WP#=0V/VCC
CE#=VCC-0.2,
WP#=0/VCC
VIN=0 to VCC (max)
Output Leakage Current
ILO
VOUT=0 to VCC (max)
Input High Voltage
VIH
0.8xVCC
-
VCC+0.3
V
Input Low Voltage
VIL
-0.3
-
0.2xVCC
V
Output High Voltage
Level
VOH
IOH = -100µA
VCC-0.4
-
-
V
IOH = -400µA
2.4
-
-
V
Output Low Voltage Level
VOL
IOL = 100µA
-
-
-
V
IOL = 2.1mA
-
-
0.4
V
VOL=0.1V
-
-
-
mA
VOL=0.4V
8.0
10.0
-
mA
Output Low Current
(R/B#)
Revision: F
IOL (R/B#)
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1Gbit x8, x16: NAND Flash Memory
Table 17: Program / Erase Characteristics
3.0V Device (2.7V-3.6V)
Parameter
Symbol
Minimum
Typical
Maximum
Units
Program Time
tPROG
-
300.0
700.0
µs
Cache Program Time (Busy Time)
tPBSY
-
5.0
tPROG
µs
Block Erase Time
tBERS
-
3.0
10.0
ms
Array Read Time
tR
-
-
25.0
µs
Cache Read Time
tRBSY
-
3.0
tR
µs
Number of Partial-Page Programs
NOP
-
-
4.0
cycles
Table 18: AC Test Conditions
Parameter
Value
Input pulse levels
0.0V to VCC
Input rise and fall times
5ns
Input and output measurement timing levels
VCC/2
Output Load
CL = 50pF
Table 19: AC Timing Characteristics
3.0V Device (2.7V-3.6V)
Parameter
Symbol
Minimum
Maximum
Units
CLE Setup time
tCLS
12.0
-
ns
CLE Hold time
tCLH
5.0
-
ns
CE# Setup time
tCS
20.0
-
ns
CE# Hold time
tCH
5.0
-
ns
WE# Pulse width
tWP
12.0
-
ns
ALE Setup time
tALS
12.0
-
ns
ALE Hold time
tALH
5.0
-
ns
Data Setup time
tDS
12.0
-
ns
Data Hold time
tDH
5.0
-
ns
Write Cycle time
tWC
25.0
-
ns
WE# High Hold time
tWH
10.0
-
ns
Address to Data Loading time
tADL
70.0
-
ns
Data Transfer from Cell to Register
tR
-
25.0
µs
ALE to RE# Delay
tAR
10.0
-
ns
CLE to RE# Delay
tCLR
10.0
-
ns
Ready to RE# Low
tRR
20.0
-
ns
RE# Pulse Width
tRP
12.0
-
ns
WE# High to Busy
tWB
-
100.0
ns
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1Gbit x8, x16: NAND Flash Memory
3.0V Device (2.7V-3.6V)
Parameter
Symbol
Minimum
Maximum
Units
Read Cycle Time
tRC
25.0
-
ns
RE# Access Time
tREA
-
20.0
ns
CE# Access Time
tCEA
-
25.0
ns
RE# High to Output Hi-Z
tRHZ
-
100.0
ns
CE# High to Output Hi-Z
CE# High to ALE or CLE
Don’t care
RE# High to Output Hold
tCHZ
-
30.0
ns
tCSD
10.0
-
ns
tRHOH
15.0
-
ns
RE# Low to Output Hold
tRLOH
5.0
-
ns
CE# High to Output Hold
tCOH
15.0
-
ns
RE# High Hold Time
tREH
10.0
-
ns
tIR
0.0
-
ns
RE# High to WE# Low
tRHW
100.0
-
ns
WE# High to RE# Low
tWHR
60.
-
ns
Device Resetting Time
(Read/Program/Erase)
tRST
-
5.0/10.0/500.0
µs
Write protection time
tWW
100.0
-
ns
Output Hi-Z to RE# Low
Revision: F
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1Gbit x8, x16: NAND Flash Memory
Error Management
NAND Flash devices have bad blocks that are invalid when shipped from the factory. However, each NAND
Flash device specifies a minimum number of valid blocks (NVB) of the total available blocks during the
endurance life of the product. An invalid block is one that contains at least one page that has more bad bits
than can be corrected by the minimum required ECC. Even though NAND Flash devices contain bad blocks,
they can be used reliably in systems provided the systems have bad block management and errorcorrection algorithms.
Axia’s NAND Flash devices are shipped from the factory erased. The factory identifies invalid blocks before
shipping by providing a bad block marker (00h to FEh) into the 1st byte in the spare area of the 1st or 2nd
page (if the 1st page is Bad). This method is compliant with ONFI Factory Defect Mapping requirements.
System software should check the first spare area location on the first page of each block before performing
any program or erase operations on the NAND Flash device, thus creating a bad block table for the whole
device.
The following recommendations should be followed to achieve maximum reliability performance:
•
•
•
Always check the program/erase status bits (PS1, PES2) after a program or erase operation
Use bad block management and wear-leveling algorithms
The first block (physical block address 00h) is guaranteed to be valid with ECC when shipped from
the factory (1K program/erase cycles)
Table 20: Error Management Details
Description
Minimum number of valid blocks (NVM)
Total number of available blocks
First spare area location
Bad block mark
Revision: F
Requirement
1004
1024
x8: byte 2048, x16: word 1024
x8: 00h - FEh, x16: 0000h - FFFEh
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ECC Management
Digital data stored in SLC NAND Flash is prone to a certain number of errors which must be detected and
corrected. Error correction codes (ECC) are widely implemented on the host side which encode data in
such a way that a decoder can identify and correct errors in the data.
The most commonly used ECC codes in the industry are Hamming, Reed-Solomon and Bose-ChaudhuriHocquenghem (BCH).
Hamming codes are widely used to detect 2-bit errors and correct 1-bit errors. As an example, according
to the Hamming ECC principle, a 22-bit ECC is needed to perform a 1-bit correction per 256 bytes. For 512
bytes, a Hamming ECC principle can be used that generates a 24-bit ECC per 528 bytes to perform a 2-bit
detection and a 1-bit correction. For 2112-byte page NAND devices, the calculation can be done per 512
bytes, which means a 24-bit ECC per 4096 bits (exactly 3 bytes per 512 bytes). 2112-byte pages are divided
into 512-byte (main area page) + 16-byte (spare) chunks. Figure 32 shows how the main and spare page
areas can be used to implement the Hamming codes.
Figure 32: Main Page divided into Chunks
64 Bytes – Spare Area
2048 Bytes – Main Area Page
A1
512 Bytes
A2
512 Bytes
A3
512 Bytes
A4
512 Bytes
Spare 1
Spare 2
Spare 3
Spare 4
16 Bytes
16 Bytes
16 Bytes
16 Bytes
BCH codes are more popular than Reed-Solomon due to their improved efficiency. However, BCH can only
correct 1-bit errors which are more typical in NAND Flash devices. Most new processor designs anticipate
coupling with NAND Flash devices and include 4-bit and greater ECC engines within the hardware itself.
Axia’s recommendation for BCH based ECC is shown in Table 21:
Table 21: Minimum ECC Requirements
Description
Minimum required ECC
Revision: F
Requirement
4-bit ECC per 528 bytes of data
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Product Use Limitations
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price of the particular Product(s) or services with respect to which losses or damages are claimed.
Revision: F
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Revision History
Revision
REV E
REV F
Date
05/17/2018
04/14/2019
Revision: F
Change Summary
Initial release
Added Typ. to Endurance
Updated Table 2: Valid Combinations List
Updated Figure 35: Power-On Behavior (Continued) and Figure 37: Power-Down
Behavior (Continued)
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