BUK6D120-60P
60 V, P-channel Trench MOSFET
3 April 2018
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
•
Extended temperature range Tj = 175 ℃
Side wettable flanks for optical solder inspection
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Trench MOSFET technology
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-60
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
VGS = -10 V; Tsp = 25 °C
-
-
-8
A
Ptot
total power dissipation
Tsp = 25 °C
-
-
15
W
VGS = -10 V; ID = -3 A; Tj = 25 °C
-
95
120
mΩ
Static characteristics
RDSon
drain-source on-state
resistance
BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
Transparent top view
DFN2020MD-6 (SOT1220)
6
D
drain
7
D
drain
8
S
source
Simplified outline
1
Graphic symbol
D
6
7
2
3
8
5
G
4
S
017aaa094
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK6D120-60P
Description
Version
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220
package; no leads; 6 terminals
7. Marking
Table 4. Marking codes
Type number
Marking code
BUK6D120-60P
4S
BUK6D120-60P
Product data sheet
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-60
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = -10 V; Tsp = 25 °C
-
-8
A
VGS = -10 V; Tsp = 100 °C
-
-5.1
A
-
-3
A
VGS = -10 V; Tamb = 25 °C
[1]
IDM
peak drain current
Tsp = 25 °C; single pulse; tp ≤ 10 µs
-
-32
A
Ptot
total power dissipation
Tsp = 25 °C
-
15
W
-
2.3
W
Tamb = 25 °C
[1]
Tj
junction temperature
-55
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
-
-8
A
-
-2.3
A
-
-32
A
-
500
V
-
28
mJ
Source-drain diode
IS
source current
Tsp = 25 °C
Tamb = 25 °C
ISM
peak source current
[1]
single pulse; tp ≤ 10 µs; Tsp = 25 °C
ESD maximum rating
VESD
electrostatic discharge
voltage
HBM
[2]
Avalanche ruggedness
EDS(AL)S
[1]
[2]
non-repetitive drainsource avalanche
energy
Tj(init) = 25 °C; ID = -0.85 A; DUT in
avalanche (unclamped)
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .
Measured between all pins.
BUK6D120-60P
Product data sheet
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Nexperia B.V. 2018. All rights reserved
3 / 15
BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
aaa-026120
120
aaa-026121
120
Pder
(%)
Ider
(%)
80
80
40
40
0
-75
Fig. 1.
25
125
Tj (°C)
0
-75
225
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
25
125
Tj (°C)
225
Normalized continuous drain current as a
function of junction temperature
aaa-028321
-102
ID
(A)
Limit RDSon = VDS/ID
-10
tp = 10 µs
100 µs
-1
1 ms
-10-1
-10-2
-10-1
Fig. 3.
DC; Tsp = 25 °C
10 ms
DC; Tamb = 25 °C; 6 cm2
100 ms
-1
-10
-102
VDS (V)
-103
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
BUK6D120-60P
Product data sheet
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[1]
Min
Typ
Max
Unit
-
57
66
K/W
-
6
10
K/W
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .
aaa-027718
10
duty cycle = 1
0.75
Zth(j-sp)
(K/W)
0.5
0.25
1
0.33
0.2
0.1
0.05
0.02
0.01
10-1
0
10-2
10-5
Fig. 4.
10-4
10-3
10-2
tp (s)
Transient thermal impedance from junction to solder point as a function of pulse duration; typical values
aaa-026870
102
duty cycle = 1
0.75
Zth(j-a)
(K/W)
0.5
0.33
0.2
0.25
0.1
10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
10
102
tp (s)
2
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BUK6D120-60P
Product data sheet
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V
-60
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-1.9
-2.5
-3.2
V
IDSS
drain leakage current
VDS = -60 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -60 V; VGS = 0 V; Tj = 175 °C
-
-
-500
µA
VGS = -20 V; VDS = 0 V
-
-
-100
nA
VGS = 20 V; VDS = 0 V
-
-
100
nA
VGS = -10 V; ID = -3 A; Tj = 25 °C
-
95
120
mΩ
VGS = -10 V; ID = -3 A; Tj = 175 °C
-
202
256
mΩ
VGS = -4.5 V; ID = -2.5 A
-
125
170
mΩ
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
gfs
forward
transconductance
VDS = -10 V; ID = -3 A
-
13
-
S
RG
gate resistance
f = 1 MHz
-
8
-
Ω
VDS = -30 V; ID = -3 A; VGS = -10 V
-
12
18
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
-
2.6
-
nC
QGD
gate-drain charge
-
2.6
-
nC
Ciss
input capacitance
-
724
-
pF
Coss
output capacitance
-
55
-
pF
Crss
reverse transfer
capacitance
-
30
-
pF
td(on)
turn-on delay time
-
9
-
ns
tr
rise time
-
10
-
ns
td(off)
turn-off delay time
-
24
-
ns
tf
fall time
-
18
-
ns
VDS = -30 V; f = 1 MHz; VGS = 0 V
VDS = -30 V; ID = -3 A; VGS = -10 V;
RG(ext) = 6 Ω
Source-drain diode
VSD
source-drain voltage
IS = -2.3 A; VGS = 0 V
-
-0.8
-1.2
V
trr
reverse recovery time
-
24
-
ns
Qr
recovered charge
IS = -2.3 A; dIS/dt = 100 A/µs;
VGS = 0 V; VDS = -30 V; Tj = 25 °C
-
24
-
nC
BUK6D120-60P
Product data sheet
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
aaa-028322
-12
-10 V
-4.5 V
ID
(A)
aaa-028323
-10-3
-5.0 V
ID
(A)
-4.2 V
min
-10-4
-8
typ
max
-4.0 V
-3.8 V
-4
-10-5
VGS = -3.5 V
0
Fig. 6.
0
-1
-2
-3
-4
VDS (V)
-10-6
-5
0
-1
-2
-3
VGS (V)
-4
Tj = 25 °C
VDS = -5 V; Tj = 25 °C
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
aaa-028324
500
-3.5 V
RDSon
RDSon
-4.0 V
400
300
aaa-028325
500
-3.8 V
400
300
-4.2 V
-4.5 V
200
Tj = 175 °C
200
-5.0 V
100
0
100
VGS = -10 V
0
-4
-8
ID (A)
Tj = 25 °C
0
-12
Tj = 25 °C
Fig. 8.
Product data sheet
-4
-8
-12
-16
-20
VGS (V)
ID = -3 A
Drain-source on-state resistance as a function
of drain current; typical values
BUK6D120-60P
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
aaa-028326
-12
aaa-028327
2.5
a
ID
(A)
2.0
-8
1.5
Tj = 175 °C
Tj = 25 °C
1.0
-4
0.5
0
0
-1
-2
-3
-4
VGS (V)
0
-60
-5
0
60
120
180
Tj (°C)
VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-028328
-4
VGS(th)
(V)
aaa-028329
104
C
(pF)
max
-3
103
typ
Ciss
-2
min
102
Coss
-1
Crss
0
-60
0
60
120
Tj (°C)
10
-10-1
180
ID = -250 μA; VDS = VGS
Product data sheet
-10
VDS (V)
-102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
BUK6D120-60P
-1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
aaa-028330
-10
VDS
VGS
(V)
ID
-8
VGS(pl)
-6
VGS(th)
VGS
-4
QGS1
-2
0
QGS2
0
4
8
QG (nC)
QGS
QGD
QG(tot)
003aaa508
Fig. 15. Gate charge waveform definitions
12
VDS = -30 V; ID = -3 A; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-028331
-10
IS
(A)
-8
-6
-4
Tj = 175 °C
-2
0
0
-0.4
Tj = 25 °C
-0.8
VSD (V)
-1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
BUK6D120-60P
Product data sheet
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
BUK6D120-60P
Product data sheet
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
12. Package outline
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220
(8×)
pin 1
index area
B
E
A
X
D
A
A1
detail X
solderable lead
end protrusion
max. 0.02 mm (6×)
C
Lp
E2
J1
D2 3
4
2
5
e
J
D1
bp (6×)
e
1
v
E1
0
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A1
bp
min
0.25
nom
max 0.65 0.04 0.35
D
D1
D2
E
E1
E2
1.9
1.0
0.2
1.9
1.1
0.51
2.1
1.2
0.3
2.1
1.3
0.61
e
J
J1
0.65 0.27 0.64
Lp
0.2
0.3
v
y
y1
0.1
0.05
0.1
Note
1. Dimension A is including plating thickness.
Outline
version
A B
6
pin 1
index area
mm
y
y1 C
sot1220_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
12-04-23
12-04-30
SOT1220
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
BUK6D120-60P
Product data sheet
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
0.33 (6×)
SOT1220
0.76
0.43 (6×)
0.66
0.53 (6×)
0.56
0.25 0.35 0.45
0.775
0.65
2.06
0.285
1.25
1.35
0.35 (6×)
1.05
0.25 (6×)
0.65
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
BUK6D120-60P
Product data sheet
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BUK6D120-60P v.1
20180403
Product data sheet
-
-
BUK6D120-60P
Product data sheet
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
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Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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sold subject to the general terms and conditions of commercial sale, as
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Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
BUK6D120-60P
Product data sheet
Trademarks
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BUK6D120-60P
Nexperia
60 V, P-channel Trench MOSFET
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................ 6
11. Test information........................................................ 10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information..................................................... 14
©
Nexperia B.V. 2018. All rights reserved
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Date of release: 3 April 2018
BUK6D120-60P
Product data sheet
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3 April 2018
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Nexperia B.V. 2018. All rights reserved
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