SS34LH

SS32LH THRU SS320LH 3A Surface Mount Schottky Barrier Rectifiers ■ Features ■ Outline • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SS32AL~SS36AL). standard >10ΚV(SS310AL~SS320AL). • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. Suffix SMA(DO-214AC) 0.06 7 (1.70 ) 0.04 7 (1.20 ) Marking code 0.18 1 (4.60 ) 0.15 7 (4.00 ) "H" indicates Halogen-free part, ex.SS32ALH. Leadfree parts meet environmental standards of MILSTD-19500 /228 0.114 (2.90 ) 0.08 3 (2.10 ) 0.012 (0.3 0) TYP. 0.09 8 (2.50 ) 0.06 7 (1.70 ) ■ Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, DO-214AC / SMA • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Weight : 0.002 ounce, 0.055 gram 0.008 (0.2 0) 0.004 (0.1 0) 0.06 1 (1.55 ) 0.03 0 (0.75 ) 0.22 4 (5.70 ) 0.18 5 (4.70 ) Dimensions in inches and (millimeters) ■ Maximum ratings and electrical characteristics Rating at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Conditions Parameter Symbol Forward rectified current See Fig.1 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) V R = V RRM T A = 25 OC Reverse current V R = V RRM T A = 100 C Thermal resistance MAX. UNIT IO 3.0 A I FSM 125 A f=1MHz and applied 4V DC reverse voltage CJ Junction to ambient R θJA T STG Storage temperature 0.5 20 Max. RMS voltage V RMS (V) Max. DC blocking voltage V R (V) Max. forward voltage @3A, T A = 25 OC V F (V) SS32LH 20 14 20 0.40 SS34LH 40 28 40 0.45 SS36LH 60 42 60 0.55 SS310LH 100 70 100 0.72 SS315LH 150 105 150 0.82 SS320LH 200 140 200 0.85 www.lgesem i .c o m pF O 55 -55 Max. repetitive peak reverse voltage V RRM (V) ht t p : // mA 250 Symbol Revision:20170701-P1 TYP. IR O Diode junction capacitance MIN. +175 C/W O C Operating temperature T J ( OC) -55 ~ +150 -55 ~ +175 mail:lge@lgesemi.com SS32LH THRU SS320LH 3A Surface Mount Schottky Barrier Rectifiers ■ Rating and characteristic curves FIG.2-TYPICAL FORWARD CHARACTERISTICS 3.0 0 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AL 32 AL ~S SS 36 L S3 20 A L~ S 0A 0 3.0 1.0 31 0.5 SS L 0A 31 L 0A 32 SS L~ 5A 31 S ~S AL 32 1.0 10 SS SS 1.5 INSTANTANEOUS FORWARD CURRENT,(A) 2.0 S3 4A L 50 2.5 SS AVERAGE FORWARD CURRENT,(A) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE TJ=25OC Pulse Width 300us 1% Duty Cycle 0.1 PEAK FORWARD SURGE CURRENT,(A) 150 120 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 90 8.3ms Single Half O TJ=25 C Sine Wave 60 JEDEC method 30 FIG.5 - TYPICAL REVERSE CHARACTERISTICS 0 1 5 50 10 100 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 700 600 500 400 300 200 10 1.0 TJ=125OC TJ=25OC .1 100 0 .01 .05 .1 .5 1 5 ht t p : // Revision:20170701-P1 10 50 100 .01 0 www.lgesem i .c o m 20 40 60 80 100 120 140 mail:lge@lgesemi.com SS32LH THRU SS320LH 3A Surface Mount Schottky Barrier Rectifiers ■ SMA foot print C A B A B C 0.068 (1.70) 0.104 (2.60) 0.060 (1.50) Dimensions in inches and (millimeters) PACKAGE SPQ/PCS CARTON SPQ/PCS CARTON SIZE/CM CARTON GW/KG CARTON NW/KG SMA 5000/REEL 80000 36X30.6X31 12.00 11.00 ht t p : // Revision:20170701-P1 www.lgesem i .c o m mail:lge@lgesemi.com