SS310F

SS32F THRU SS320F Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 3.0A ∠ALL ROUND C A ∠ALL ROUND D E A V M g e E A g pad HE pad FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Top View MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57 mg / 0.002oz A C D E HE e max 1.3 0.26 4.4 3.7 5.5 2.2 min 1.1 0.18 4.2 3.5 5.1 1.9 max 51 10 173 146 216 86 min 43 7 165 138 200 75 UNIT mm mil Bottom View g ∠ 1.0 9° 40 Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Parameter Symbols SS32F SS34F SS36F SS38F SS310F SS312F SS315F SS320F Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 3.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 80 A Max Instantaneous Forward Voltage at 3 A VF Maximum DC Reverse Current T a = 25°C T a =100°C IR 0.5 5 0.3 3 mA Typical Junction Capacitance（1） Cj 450 400 pF Typical Thermal Resistance （2） RθJA 65 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C at Rated DC Reverse Voltage Operating Junction Temperature Range Storage Temperature Range 0.55 0.70 0.85 0.95 V （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com SS32F THRU SS320F Fig.2 Typical Reverse Characteristics 3.5 3.0 2.4 1.8 1.2 0.6 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Average Forward Current (A) Fig.1 Forward Current Derating Curve 10 4 T J =100°C 10 3 T J =75°C 10 2 SS32BF/SS36BF T J =25°C 10 0 0 Case Temperature (°C) 40 60 80 100 Fig.4 Typical Junction Capacitance T J =25°C 10 1.0 SS32BF/SS34BF SS36BF/SS38BF SS310BF/SS312BF SS315BF/SS320BF 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 500 200 100 20 SS32BF~SS36BF SS38BF~SS320BF 10 1.8 0.1 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 80 70 60 50 40 8.3 ms Single Half Sine Wave (JEDEC Method) 20 1 1000 Instaneous Forward Voltage (V) 90 30 Junction Capacitance ( pF) 20 10 100 Number of Cycles at 60Hz ht t p : // Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) Peak Forward Surage Current (A) 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Revision:20170701-P1 SS38BF-SS320BF 10 1 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.lgesemi .c o m mail:lge@lgesemi.com