BC857B

Plastic-Encapsulate Transistors BC856A/B (PNP) BC857A/B/C (PNP) BC858A/B/C (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking BC856A BC856B 3A BC857A BC857B 3B 3E 3F BC857C BC858A BC858B BC858C 3G 3J 3K 1. BASE 3L 2. EMITTER SOT-23 3. COLLECTO MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Value Unit BC856 VCBO -80 V BC857 VCBO -50 BC858 VCBO -30 BC856 VCEO -65 BC857 VCEO -45 BC858 VCEO -30 VEBO -5 V Collector Current -Continuous IC -0.1 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Collector-Base Voltage Collector-Emitter Voltage Symbol Emitter-Base Voltage GUANGDONG HOTTECH INDUSTRIAL CO., LTD V Page:P3-P1 Plastic-Encapsulate Transistors ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Test conditions VCBO IC= -10μA, IE=0 Collector-emitter breakdown voltage BC856 Collector cut-off current BC856 Collector cut-off current IC= -10mA, IB=0 VEBO IE= -1μA, IC=0 ICBO VCB= -70 V , IE=0 VCB= -45 V , IE=0 BC858 VCB= -25 V , IE=0 BC856 VCE= -60 V , IB=0 ICEO DC current gain IEBO V -5 VCE= -40 V , IB=0 VEB= -5 V , IC=0 BC856A, 857A,858A BC856B, 857B,858B -45 V -0.1 μA -0.1 μA VCE= -25 V , IB=0 BC858 Emitter cut-off current V -30 BC857 BC857 -50 -65 VCEO BC858 Emitter-base breakdown voltage Unit -30 BC858 BC857 Max -80 BC856 BC857 Min hFE VCE= -5V, IC= -2mA BC857C,BC858C -0.1 125 250 220 475 420 800 μA Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -5mA -1.1 V fT VCE= -5 V, IC= -10mA Transition frequency Typical MHz f=100MHz Cob Collector capacitance BC856A/B BC857A/B/C BC858A/B/C 100 VCB=-10V, f=1MHz 4.5 pF Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3-P2 Plastic-Encapsulate Transistors BC856A/B BC857A/B/C BC858A/B/C Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3-P3