2SC1623-L6-SOT-23

Plastic-Encapsulate Transistors FEATURES 2SC1623 (NPN) High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.1 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 SOT-23 2. EMITTER 3. COLLECTO unless otherwise specified) Symbol Parameter 1. BASE Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage VCEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage VEBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA hFE DC current gain VCE=6V,IC=1mA 90 200 600 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA 1 V fT Transition frequency VCE=6V,IC=10mA 250 MHz CLASSIFICATIONOF hFE Rank L4 Range 90-180 GUANGDONG HOTTECH L5 135-270 L6 L7 300-400 300-600 INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SC1623 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2