S8050

S8050 BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to S8550  Excellent hFE Linearity  High Collector Current  Surface Mount device SOT-23 MECHANICAL DATA     Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 40 25 5 500 300 417 150 -55 ~+150 Unit V V V mA mW °C/W °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min V(BR)CBO 40 V IC=100uA，IE=0 Collector-emitter breakdown voltage V(BR)CEO 25 V IC=1mA，IB=0 Emitter-base breakdown voltage 5 V IE=100uA，IC=0 Collector-base breakdown voltage V(BR)EBO Typ Max Unit Conditions Collector cut-off current ICBO 0.1 uA VCB=40V, IE=0 Collector cut-off current ICEO 0.1 uA VCE=20V, IB=0 Emitter cut-off current IEBO 0.1 uA VEB=5V, IC=0 DC current gain hFE1 120 hFE2 50 VCE=1V, IC=50mA 400 VCE=1V, IC=500mA Collector-emitter saturation voltage VCE(sat) 0.6 V IC=500mA，IB=50mA Base-emitter saturation voltage VBE(sat) 1.2 V IC=500mA，IB=50mA Transition frequency CLASSIFICATION OF hFE Rank Range Marking © SHENZHEN HOTTECH ELECTRONICS CO.,LTD fT L 120-200 150 MHz H 200-350 J3Y E-mail:hkt@heketai.com VCE=6V, IC=20mA, f=30MHz J 300-400 1/4 S8050 BIPOLAR TRANSISTOR (NPN) Typical Characteristics Static Characteristic COLLECTOR CURRENT IC (mA) 400uA 80 hFE 1000 350uA 250uA 200uA 40 IC Ta=100℃ 300uA 60 —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ DC CURRENT GAIN hFE 100 150uA Ta=25℃ 100 100uA 20 IB=50uA 10 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat 500 —— VCE 20 1 3 10 IC VBEsat 1.2 500 100 30 COLLECTOR CURRENT (V) IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 100 Ta=100℃ Ta=25℃ 30 Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 1 10 3 COLLECTOR CURRENT IC 500 —— IC 0.0 500 100 30 1 3 30 10 (mA) 100 COLLECTOR CURRENT VBE Cob/ Cib 100 —— IC VCB/ VEB COMMON EMITTER VCE=1V f=1MHz IE=0/ IC=0 100 Ta=25℃ Cib 30 CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) 500 (mA) 30 Ta=25℃ 10 Ta=100℃ 3 1 Cob 10 3 0.3 0.1 0.2 0.4 0.6 0.8 1 0.1 1.0 fT —— IC PC —— 400 10 3 REVERSE VOLTAGE V 20 (V) Ta VCE=6V Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) 1000 1 0.3 BASE-EMMITER VOLTAGE VBE (V) 100 10 10 300 200 100 0 100 30 COLLECTOR CURRENT IC © SHENZHEN HOTTECH ELECTRONICS CO.,LTD (mA) 0 25 50 75 AMBIENT TEMPERATURE E-mail:hkt@heketai.com 100 Ta 125 150 (℃ ) 2/4 S8050 BIPOLAR TRANSISTOR (NPN) SOT-23 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 RE F 0.079 0.022 REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/4 S8050 BIPOLAR TRANSISTOR (NPN) SOT-23 Tape and Reel SOT-23 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-23 Tape Leader and Trailer SOT-23 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 4/4