SS8550

Plastic-Encapsulate Transistors FEATURES SS8550 Complimentary to SS8050 Marking : (PNP) Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1500 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 1. BASE SOT-23 2. EMITTER 3. COLLECTO unless otherwise specified) Parameter Symbol Test conditions Min Max Umiot Collector-base breakdown voltage VCBO IC=-100μA, IE=0 -40 V Collector-emitter breakdown voltage VCEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage VEBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-100mA 120 hFE(2) VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter voltage VBE VCE= -1V IC= -10mA -1 V Transition frequency fT 400 DC current gain Cob output capacitance CLASSIFICATION OF VCE= -10V, IC= -50mA f=30MHz 100 MHz (VCB=-10V,IE=0,f=1MHz) 20 pF hFE Rank L Range 120-200 GUANGDONG HOTTECH H 200-350 INDUSTRIAL CO., LTD J 300-400 Page:P2-P1 Plastic-Encapsulate Transistors SS8550 Typical Characteristics 1000 -0.5 VCE = -1V -0.4 IB=-3.5mA IB=-3.0mA IB=-2.5mA -0.3 IB=-2.0mA IB=-1.5mA -0.2 IB=-1.0mA -0.1 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB=-4.0mA 100 10 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 1 -0.1 -2.0 -10000 -100 -1000 VBE(sat) -100 VCE(sat) -10 -0.1 -1 -10 -100 VCE = -1V -10 -1 -0.1 -0.0 -1000 10 1 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE GUANGDONG HOTTECH fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHz IE=0 -10 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE 100 -1 -1000 -100 IC=10IB IC[mA], COLLECTOR CURRENT Cob[pF], CAPACITANCE -10 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE -1 1000 VCE=-10V 100 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT INDUSTRIAL CO., LTD Page:P2-P2