BC817-40

Plastic-Encapsulate Transistors FEATURES BC817-16 (NPN) BC817-25 (NPN) BC817-40 (NPN) For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) Marking BC817-16 BC817-25 6A BC817-40 6B MAXIMUM RATINGS (TA=25 6C unless otherwise noted) Parameter Collector-Base Voltage Symbol Value Unit 50 V VCBO 1. BASE SOT-23 2. EMITTER 3. COLLECTO DCollector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 500 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions Min Max Unit Collector-base breakdown voltage VCB IC= 10μA, IE=0 50 V Collector-emitter breakdown voltage VO CE IC= 10mA, IB=0 45 V Emitter-base breakdown voltage VO EB IE= 1μA, IC=0 5 V Collector cut-off current O ICB VCB= 45 V , Emitter cut-off current O IEB VEB= 4V, IC=0 IE=0 0.1 μA 0.1 μA O hFE(1 VCE= 1V, IC= 100mA 100 ) hFE(2 VCE= 1V, IC= 500mA 40 Collector-emitter saturation voltage VCE)(sat) IC= 500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V Base-emitter voltage VB VCE= 1 V, IC= 500mA 1.2 V Collecter capactiance CEob VCB=10V ,f=1MHz Transition frequency fT DC current gain 600 10 pF VCE= 5 V, IC= 10mA CLASSIFICATION OF Rank Range 100 f=100MHz MHz hFE 6A 100-250 GUANGDONG HOTTECH 6B 160-400 INDUSTRIAL CO., LTD 6C 250-600 Page:P2-P1 Plastic-Encapsulate Transistors BC817-16 BC817-25 BC817-40 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2