S9013

Plastic-Encapsulate Transistors FEATURES S9013 (NPN) Complimentary to S9012 MARKING: J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V 1. BASE Collector Current -Continuous IC 0.5 A 2. EMITTER Collector Power Dissipation PC 0.3 W 3. COLLECTO Junction Temperature TJ 150 Storage Temperature Tstg ELECTRICAL CHARACTERISTICS (Tamb=25 -55 to +150 unless otherwise specified) Symbol Parameter SOT-23 Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage VCEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage VEBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 uA Collector cut-off current ICEO VCE=20V, IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 uA hFE(1) VCE=1V, IC= 50mA 120 hFE(2) VCE=1V, IC=500mA 40 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB= 50mA 1.2 V fT Transition frequency CLASSIFICATION OF VCE=6V, IC= 20mA f=30MHz 150 MHz hFE Rank L H J Range 120-200 200-350 300-400 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors S9013 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2