AC3401A

AC3401A 亚芯电子（深圳）有限公司 B P03B -30V /-4A Single P Power MOSFET 4P03B P V General Description -30V /-4A Single P Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID Part ID Package Type Marking Tape and reel infomation AC3401A SOT23-3 A19T 3000 Parameter -30 V 42.0 mΩ 66.0 mΩ -4 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 12 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G -6.4 IAR -1.3 EAR -2.9 TA=25°C A A mJ 1.4 PD TA=70°C Junction and Storage Temperature Range -3.2 IDM G Repetitive avalanche energy L=0.1mH -4.0 ID W 0.9 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 150 225 °C/W 300 360 °C/W 90 144 °C/W Rev0：Oct 2018 亚芯电子（深圳）有限公司 AC3401A -30V /-4A Single P Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units -30 V -1 -5 uA ±100 nA -1 -1.3 V VGS=-10V, ID=-4A 42.0 60.0 VGS=-4.5V, ID=-4A 66.0 85.8 Forward Transconductance VDS=-5V, ID=-4A 59 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -0.7 S -1 V -4 A Typ Max Units 645 786 pF 80 98 pF 55 65 pF 1.25 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 2.5 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 7 VGS=-10V, VDS=-15V, ID=-4A VGS=-10V, VDS=-15V,RL=0.75 Ω, RGEN=3Ω 3.5 1.75 4.4 15.4 nC ns 4.95 IF=-8A, dI/dt=500A/µs 11 ns IF=18A, dI/dt=500A/µs 3.5 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC3401A -30V /-4A Single P Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC3401A -30V /-4A Single P Power MOSFET Rev0：Oct 2018