AC2301

AC2301 亚芯电子（深圳）有限公司 B P03B -30V /-2.6A Single P Power MOSFET 3P03B P V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID -30V /-2.6A Single P Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation AC2301 SOT23-3 2301 3000 Parameter -30 V 105.0 mΩ 165.0 mΩ -2.6 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 12 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G -4.2 IAR -0.8 EAR -1.9 TA=25°C A A mJ 1.4 PD TA=70°C Junction and Storage Temperature Range -2.2 IDM G Repetitive avalanche energy L=0.1mH -2.6 ID W 0.9 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 375 562 °C/W 750 900 °C/W 225 360 °C/W Rev0：Oct 2018 亚芯电子（深圳）有限公司 AC2301 -30V /-2.6A Single P Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units -30 V -1 -5 uA ±100 nA -1.1 -1.4 V VGS=-10V, ID=-2.6A 105.0 150.0 VGS=-4.5V, ID=-2.6A 165.0 214.5 Forward Transconductance VDS=-5V, ID=-2.6A 63 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -0.7 S -1 V -2.6 A Typ Max Units 260 317 pF 37 45 pF 20 23 pF 0.5 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 1 tD(on) Turn-On DelayTime 5.75 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 2.8 VGS=-10V, VDS=-15V, ID=-2.6A VGS=-10V, VDS=-15V,RL=0.75 Ω, RGEN=3Ω 1.4 0.7 4.6 16.1 nC ns 5.175 IF=-8A, dI/dt=500A/µs 11.5 ns IF=18A, dI/dt=500A/µs 4.5 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC2301 -30V /-2.6A Single P Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC2301 -30V /-2.6A Single P Power MOSFET Rev0：Oct 2018