AC9926

AC9926 亚芯电子（深圳）有限公司 C B02C 20V /7.6A Dual 2N Power MOSFET 8B02C B V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 20V /7.6A Dual 2N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation AC9926 SOP8 9926 3000 Parameter 20 V 18.2 mΩ 34.0 mΩ 7.6 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 12.2 IAR 2.4 EAR 5.6 TA=25°C A A mJ 2 PD TA=70°C Junction and Storage Temperature Range 6.1 IDM G Repetitive avalanche energy L=0.1mH 7.6 ID W 1.28 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 65 97 °C/W 130 156 °C/W 39 62 °C/W Rev0：Oct 2018 亚芯电子（深圳）有限公司 AC9926 20V /7.6A Dual 2N Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units 20 V 1 5 uA ±100 nA 0.8 1.1 V VGS=-10V, ID=7.6A 18.2 26.0 VGS=4.5V, ID=7.6A 34.0 52.0 Forward Transconductance VDS=5V, ID=7.6A 99 Diode Forward Voltage IS=1A,VGS=34V 0.72 0.6 S 1 V 7.6 A Typ Max Units 525 640 pF 95 116 pF 75 89 pF 1 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 2 tD(on) Turn-On DelayTime 7 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 6 VGS=10V, VDS=15V, ID=7.6A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 3 1.4 5.6 19.6 nC ns 6.3 IF=-8A, dI/dt=500A/µs 14 ns IF=18A, dI/dt=500A/µs 6 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC9926 20V /7.6A Dual 2N Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC9926 20V /7.6A Dual 2N Power MOSFET Rev0：Oct 2018