AC4842

AC4842 亚芯电子（深圳）有限公司 C B03C 30V /7.7A Dual 2N Power MOSFET 8B03C B V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 30V /7.7A Dual 2N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation AC4842 SOP8 4842 3000 Parameter 30 V 21.0 mΩ 33.0 mΩ 7.7 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 12.3 IAR 2.5 EAR 5.7 TA=25°C A A mJ 2 PD TA=70°C Junction and Storage Temperature Range 6.5 IDM G Repetitive avalanche energy L=0.1mH 7.7 ID W 1.44 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 75 112 °C/W 150 180 °C/W 45 72 °C/W Rev0：Oct 2018 亚芯电子（深圳）有限公司 AC4842 30V /7.7A Dual 2N Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units 30 V 1 5 uA ±100 nA 2 2.6 V VGS=-10V, ID=7.7A 21.0 30.0 VGS=4.5V, ID=7.7A 33.0 42.9 Forward Transconductance VDS=5V, ID=7.7A 40 Diode Forward Voltage IS=1A,VGS=35V 0.72 1.3 S 1 V 7.7 A Typ Max Units 373 455 pF 67 82 pF 41 48 pF 0.85 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 1.7 tD(on) Turn-On DelayTime 5.25 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 3.5 VGS=10V, VDS=15V, ID=7.7A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 1.75 1.19 4.2 14.7 nC ns 4.725 IF=-8A, dI/dt=500A/µs 10.5 ns IF=18A, dI/dt=500A/µs 4.5 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC4842 30V /7.7A Dual 2N Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC4842 30V /7.7A Dual 2N Power MOSFET Rev0：Oct 2018