AC4614B

AC4614B 亚芯电子（深圳）有限公司 C N04C 40V /6A Complementary NP Power MOSFET 6N04C N V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 40V /6A Complementary NP Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation AC4614B SOP8 4614 3000 Parameter 40 V 23.0 mΩ 35.2 mΩ 6 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 9.6 IAR 1.9 EAR 4.4 TA=25°C A A mJ 2 PD TA=70°C Junction and Storage Temperature Range 5.0 IDM G Repetitive avalanche energy L=0.1mH 6.0 ID W 1.28 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 95 142 °C/W 190 228 °C/W 57 91 °C/W Rev0：Oct 2018 亚芯电子（深圳）有限公司 AC4614B 40V /6A Complementary NP Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units 40 V 1 5 uA ±100 nA 2.3 3 V VGS=-10V, ID=6A 23.0 32.0 VGS=4.5V, ID=6A 35.2 45.8 Forward Transconductance VDS=5V, ID=6A 87 Diode Forward Voltage IS=1A,VGS=22V 0.72 1.5 S 1 V 6 A Typ Max Units 516 629 pF 82 100 pF 43 51 pF 0.7 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 1.4 tD(on) Turn-On DelayTime 9 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 4.3 VGS=10V, VDS=15V, ID=6A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 2.15 0.98 7.2 25.2 nC ns 8.1 IF=-8A, dI/dt=500A/µs 18 ns IF=18A, dI/dt=500A/µs 10 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn AC4614B 40V /6A Complementary NP Power MOSFET 第 3 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn AC4614B 40V /6A Complementary NP Power MOSFET 第 4 页，共 4 页 Rev0：Oct 2018