AC4828A

AC4828 亚芯电子（深圳）有限公司 C B06C 60V /15A Dual 2N Power MOSFET 15B06C B V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 60V /15A Dual 2N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation AC4828 SOP8 4828 3000 Parameter 60 V 14.0 mΩ 25.0 mΩ 15 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 24.0 IAR 4.8 EAR 11.0 TA=25°C A A mJ 30 PD TA=70°C Junction and Storage Temperature Range 12.0 IDM G Repetitive avalanche energy L=0.1mH 15.0 ID W 25 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 192 288 °C/W 385 462 °C/W 115 184 °C/W Rev0：Oct 2018 AC4828 亚芯电子（深圳）有限公司 60V /15A Dual 2N Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units 60 V 1 5 uA ±100 nA 1.5 2.5 V VGS=10V, ID=10A 14.0 18.0 VGS=4.5V, ID=10A 25.0 32.5 Forward Transconductance VDS=5V, ID=4.5A 78 Diode Forward Voltage IS=1A,VGS=13V 0.72 1 S 1 V 4.5 A Typ Max Units 450 549 pF 60 73 pF 25 29 pF 1.1 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 2.2 tD(on) Turn-On DelayTime 13.75 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 4.3 VGS=10V, VDS=15V, ID=4.5A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 2.15 1.54 11 38.5 nC ns 12.375 IF=-8A, dI/dt=500A/µs 27.5 ns IF=18A, dI/dt=500A/µs 32 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC4828 60V /15A Dual 2N Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC4828 60V /15A Dual 2N Power MOSFET Rev0：Oct 2018