AC4812

AC4812 亚芯电子（深圳）有限公司 C B03C 30V /6A Dual 2N Power MOSFET 6B03C B V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 30V /6A Dual 2N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation AC4812 SOP8 4812 3000 Parameter 30 V 29.4 mΩ 46.2 mΩ 6 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 9.6 IAR 1.9 EAR 4.4 TA=25°C A A mJ 2 PD TA=70°C Junction and Storage Temperature Range 5.0 IDM G Repetitive avalanche energy L=0.1mH 6.0 ID W 1.3 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 105 157 °C/W 210 252 °C/W 63 100 °C/W Rev0：Oct 2018 AC4812 亚芯电子（深圳）有限公司 30V /6A Dual 2N Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units 30 V 1 5 uA ±100 nA 1.8 2.4 V VGS=-10V, ID=6A 29.4 42.0 VGS=4.5V, ID=6A 46.2 60.1 Forward Transconductance VDS=5V, ID=6A 86 Diode Forward Voltage IS=1A,VGS=21V 0.72 1.2 S 1 V 6 A Typ Max Units 255 311 pF 45 55 pF 35 41 pF 0.65 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 1.3 tD(on) Turn-On DelayTime 4.25 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 2.55 VGS=10V, VDS=15V, ID=6A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 1.275 0.91 3.4 11.9 nC ns 3.825 IF=-8A, dI/dt=500A/µs 8.5 ns IF=18A, dI/dt=500A/µs 2.2 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC4812 30V /6A Dual 2N Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC4812 30V /6A Dual 2N Power MOSFET Rev0：Oct 2018