AC3416
亚芯电子(深圳)有限公司
B
E02B
20V /6.5A Single N Power MOSFET
6E02B
E
V
General Description
DS
RDS(on),TYP@VGS=10V
RDS(on),TYP@VGS=4.5
ID
20V /6.5A Single N Power MOSFET
Very low on-resistance RDS(on) @ VGS=4.5 V
Pb-free lead plating; RoHS compliant
Part ID
Package Type
Marking
Tape and reel
infomation
AC3416
SOT23-3
3416
3000
Parameter
20
V
19.0
mΩ
26.0
mΩ
6.5
A
100% UIS Tested
100% Rg Tested
Symbol
Maximum
Units
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
8
±V
Continuous Drain Current A
Pulsed Drain Current
Avalanche Current
TA=25°C
TA=70°C
B
Power Dissipation
G
10.4
IAR
2.1
EAR
4.8
TA=25°C
A
A
mJ
1.4
PD
TA=70°C
Junction and Storage Temperature Range
5.2
IDM
G
Repetitive avalanche energy L=0.1mH
6.5
ID
W
0.9
-55 to 150
TJ, TSTG
°C
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady State
Maximum Junction-to-Lead
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C
Steady State
第 1 页,共 4 页
RθJA
RθJL
Typ
Max
Units
55
82
°C/W
110
132
°C/W
33
52
°C/W
Rev0:Oct 2018
亚芯电子(深圳)有限公司
AC3416
20V /6.5A Single N Power MOSFET
STATIC PARAMETERS
Symbol
BVDSS
Parameter
Drain-Source Breakdown
Voltage
Conditions
ID = -250uA, VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±20V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = 250µA
RDS(ON)
Static Drain-Source OnResistance
gFS
VSD
Min
Typ
Max
Units
20
V
1
5
uA
±100
nA
0.8
1.1
V
VGS=-4.5V, ID=6.5A
19.0
22.0
VGS=2.5V, ID=6.5A
26.0
34.0
Forward Transconductance
VDS=5V, ID=6.5A
93
Diode Forward Voltage
IS=1A,VGS=28V
0.72
0.6
S
1
V
6.5
A
Typ
Max
Units
1295
1579
pF
160
196
pF
87
103
pF
1.3
Ω
Max
Units
Maximum Body-Diode Continuous Current
IS
mΩ
DYNAMIC PARAMETERS
Symbol
Parameter
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Conditions
Min
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Symbol
Parameter
Qg (10V)
Total Gate Charge
Qg 4.5V)
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
2.6
tD(on)
Turn-On DelayTime
15.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
Body Diode Reverse Recovery
Time
trr
Qrr
Body Diode Reverse Recovery
Charge
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Conditions
Min
Typ
10
VGS=10V, VDS=15V, ID=6.5A
VGS=10V, VDS=15V,RL=0.75Ω,
RGEN=3Ω
5
1.82
12.4
43.4
nC
ns
13.95
IF=-8A, dI/dt=500A/µs
31
ns
IF=18A, dI/dt=500A/µs
6.8
nC
第 2 页,共 4 页
Rev0:Oct 2018
亚芯电子(深圳)有限公司
www.asiachip.cn
第 3 页,共 4 页
AC3416
20V /6.5A Single N Power MOSFET
Rev0:Oct 2018
亚芯电子(深圳)有限公司
www.asiachip.cn
第 4 页,共 4 页
AC3416
20V /6.5A Single N Power MOSFET
Rev0:Oct 2018
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