AC4435

AC4435 亚芯电子（深圳）有限公司 C P03C -30V /-10.5A Single P Power MOSFET 11P03C P V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID -30V /-10.5A Single P Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation AC4435 SOP8 4435 3000 Parameter -30 V 25.2 mΩ 39.6 mΩ -10.5 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 25 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G -16.8 IAR -3.4 EAR -7.7 TA=25°C A A mJ 3.1 PD TA=70°C Junction and Storage Temperature Range -8.0 IDM G Repetitive avalanche energy L=0.1mH -10.5 ID W 2 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 90 135 °C/W 180 216 °C/W 54 86 °C/W Rev0：Oct 2018 亚芯电子（深圳）有限公司 AC4435 -30V /-10.5A Single P Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units -30 V -1 -5 uA ±100 nA -2.3 -3 V VGS=-10V, ID=-10.5A 25.2 36.0 VGS=-4.5V, ID=-10.5A 39.6 51.5 Forward Transconductance VDS=-5V, ID=-10.5A 95 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1.5 S -1 V -10.5 A Typ Max Units 1130 1378 pF 240 295 pF 155 184 pF 1.65 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 3.3 tD(on) Turn-On DelayTime 12.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 9.5 VGS=-10V, VDS=-15V, ID=10.5A VGS=-10V, VDS=-15V,RL=0.75 Ω, RGEN=3Ω 4.75 2.31 10 35 nC ns 11.25 IF=-8A, dI/dt=500A/µs 25 ns IF=18A, dI/dt=500A/µs 12 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC4435 -30V /-10.5A Single P Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC4435 -30V /-10.5A Single P Power MOSFET Rev0：Oct 2018