ACN6590

ACN6590 亚芯电子（深圳）有限公司 D N04D 40V /150A Single N Power MOSFET 150N04D N V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 40V /150A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation ACN6590 DFN5x6 6590 3000 Parameter 40 V 1.6 mΩ 3.0 mΩ 150 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 240.0 IAR 48.0 EAR 110.4 TA=25°C A A mJ 208 PD TA=70°C Junction and Storage Temperature Range 120.0 IDM G Repetitive avalanche energy L=0.1mH 150.0 ID W 90 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 3 5 °C/W 7 9 °C/W 2 3 °C/W Rev0：Oct 2018 亚芯电子（深圳）有限公司 ACN6590 40V /150A Single N Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units 40 V 1 5 uA ±100 nA 1.7 2.3 V VGS=10V, ID=20A 1.6 2.5 VGS=4.5V, ID=20A 3.0 5.2 Forward Transconductance VDS=5V, ID=20A 44 Diode Forward Voltage IS=1A,VGS=219V 0.72 1.2 S 1 V 100 A Typ Max Units 9650 10850 pF 1438 1768 pF 85 101 pF 3.5 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 7 tD(on) Turn-On DelayTime 13 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 45 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 22.5 4.9 10.4 36.4 nC ns 11.7 IF=-8A, dI/dt=500A/µs 26 ns IF=18A, dI/dt=500A/µs 83 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 ACN6590 40V /150A Single N Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 ACN6590 40V /150A Single N Power MOSFET Rev0：Oct 2018