ACN6362

ACN6362 亚芯电子（深圳）有限公司 D N03D 30V /60A Single N Power MOSFET 60N03D N V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 30V /60A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation ACN6362 DFN5x6 6362 3000 Parameter 30 V 6.0 mΩ 9.5 mΩ 60 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 96.0 IAR 19.2 EAR 44.2 TA=25°C A A mJ 31 PD TA=70°C Junction and Storage Temperature Range 39* IDM G Repetitive avalanche energy L=0.1mH 60.0 ID W 13* -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 21 32 °C/W 43 51 °C/W 12 20 °C/W Rev0：Oct 2018 ACN6362 亚芯电子（深圳）有限公司 30V /60A Single N Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units 30 V 1 5 uA ±100 nA 1.7 2.2 V VGS=10V, ID=20A 6.0 8.6 VGS=4.5V, ID=20A 9.5 12.3 Forward Transconductance VDS=5V, ID=20A 75 Diode Forward Voltage IS=1A,VGS=190V 0.72 1.1 S 1 V 60 A Typ Max Units 820 1000 pF 340 418 pF 40 47 pF 1.2 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 2.4 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 6.1 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 3.05 1.68 4.4 15.4 nC ns 4.95 IF=-8A, dI/dt=500A/µs 11 ns IF=18A, dI/dt=500A/µs 19 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 ACN6362 30V /60A Single N Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 ACN6362 30V /60A Single N Power MOSFET Rev0：Oct 2018