ACN6354
亚芯电子(深圳)有限公司
D
N03D
30V /83A Single N Power MOSFET
83N03D
N
V
General Description
DS
RDS(on),TYP@VGS=10V
RDS(on),TYP@VGS=4.5
ID
30V /83A Single N Power MOSFET
Very low on-resistance RDS(on) @ VGS=4.5 V
Pb-free lead plating; RoHS compliant
Part ID
Package Type
Marking
Tape and reel
infomation
ACN6354
DFN5x6
6354
3000
Parameter
30
V
3.6
mΩ
5.7
mΩ
83
A
100% UIS Tested
100% Rg Tested
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
±V
Continuous Drain Current A
Pulsed Drain Current
Avalanche Current
TA=25°C
TA=70°C
B
Power Dissipation
G
132.8
IAR
26.6
EAR
61.1
TA=25°C
A
A
mJ
36
PD
TA=70°C
Junction and Storage Temperature Range
52*
IDM
G
Repetitive avalanche energy L=0.1mH
83.0
ID
W
14*
-55 to 150
TJ, TSTG
°C
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady State
Maximum Junction-to-Lead
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C
Steady State
第 1 页,共 4 页
RθJA
RθJL
Typ
Max
Units
13
19
°C/W
26
31
°C/W
7
12
°C/W
Rev0:Oct 2018
ACN6354
亚芯电子(深圳)有限公司
30V /83A Single N Power MOSFET
STATIC PARAMETERS
Symbol
BVDSS
Parameter
Drain-Source Breakdown
Voltage
Conditions
ID = -250uA, VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±20V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = 250µA
RDS(ON)
Static Drain-Source OnResistance
gFS
VSD
Min
Typ
Max
Units
30
V
1
5
uA
±100
nA
1.7
2.2
V
VGS=10V, ID=20A
3.6
5.2
VGS=4.5V, ID=20A
5.7
7.4
Forward Transconductance
VDS=5V, ID=20A
95
Diode Forward Voltage
IS=1A,VGS=210V
0.72
1.1
S
1
V
83
A
Typ
Max
Units
1330
1622
pF
360
442
pF
55
65
pF
1.75
Ω
Max
Units
Maximum Body-Diode Continuous Current
IS
mΩ
DYNAMIC PARAMETERS
Symbol
Parameter
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Conditions
Min
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Symbol
Parameter
Qg (10V)
Total Gate Charge
Qg 4.5V)
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
3.5
tD(on)
Turn-On DelayTime
5.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
Body Diode Reverse Recovery
Time
trr
Qrr
Body Diode Reverse Recovery
Charge
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Conditions
Min
Typ
10
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V,RL=0.75Ω,
RGEN=3Ω
5
2.45
4.4
15.4
nC
ns
4.95
IF=-8A, dI/dt=500A/µs
11
ns
IF=18A, dI/dt=500A/µs
17
nC
第 2 页,共 4 页
Rev0:Oct 2018
亚芯电子(深圳)有限公司
www.asiachip.cn
第 3 页,共 4 页
ACN6354
30V /83A Single N Power MOSFET
Rev0:Oct 2018
亚芯电子(深圳)有限公司
www.asiachip.cn
第 4 页,共 4 页
ACN6354
30V /83A Single N Power MOSFET
Rev0:Oct 2018
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