ACN7400A

ACN7400A 亚芯电子（深圳）有限公司 E N03E 30V /40A Single N Power MOSFET 40N03E N V General Description 30V /40A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID Part ID Package Type Marking Tape and reel infomation ACN7400A DFN3X3 7400A 5000 Parameter 30 V 7.4 mΩ 11.6 mΩ 40 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 64.0 IAR 12.8 EAR 29.4 TA=25°C A A mJ 25 PD TA=70°C Junction and Storage Temperature Range 28.0 IDM G Repetitive avalanche energy L=0.1mH 40.0 ID W 10 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 26 39 °C/W 52 63 °C/W 15 25 °C/W Rev0：Oct 2018 ACN7400A 亚芯电子（深圳）有限公司 30V /40A Single N Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units 30 V 1 5 uA ±100 nA 1.9 2.5 V VGS=10V, ID=20A 7.4 10.5 VGS=4.5V, ID=20A 11.6 15.0 Forward Transconductance VDS=5V, ID=20A 87 Diode Forward Voltage IS=1A,VGS=142V 0.72 1.3 S 1 V 40 A Typ Max Units 1150 1403 pF 180 221 pF 105 124 pF 2.5 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 5 tD(on) Turn-On DelayTime 4.35 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 9.5 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 4.75 3.5 3.48 12.18 nC ns 3.915 IF=-8A, dI/dt=500A/µs 8.7 ns IF=18A, dI/dt=500A/µs 13.5 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 ACN7400A 30V /40A Single N Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 ACN7400A 30V /40A Single N Power MOSFET Rev0：Oct 2018