BSN20

BSN20 N-Channel Enhancement-Mode MOSFET Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (R DS(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. SOT23 D • Power management functions • DC-DC Converters • Backlighting G S Top View ■ MAXIMUM RATINGS Characteristic Symbol Unit Max 50 V V GS + 20 V Drain Current- continuous IDR 173 mA Drain Current-pulsed IDRM 700 mA Drain-Source Voltage BVDSS Gate- Source Voltage ■ THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA=25℃ Derate above25℃ Thermal Resistance Junction to Ambient Junction and Storage Temperature 1 Symbol Max Unit PD 830 1 .8 mW mW/℃ R ΘJA 350 ℃/W T J, Tstg 150℃,-55to+150℃ BSN20 N-Channel Enhancement-Mode MOSFET ■ ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Characteristic Drain-Source Breakdown Voltage (ID =10uA, VGS=0V) Gate Threshold Voltage (ID =1mA ,VGS= VDS) Drain-Source On Voltage (ID=50mA,VGS=5V) (ID =500mA,VGS=10V) Diode Forward Voltage Drop (ISD=180mA, VGS=0V) Zero Gate Voltage Drain Current (VGS=0V, VDS= 40V) (VGS=0V, VDS=40V, TA=150℃) Gate Body Leakage (VGS=+20V, VDS=0V) Static Drain-Source On-State Resistance (ID=100mA,VGS=10V) (ID=100mA,VGS=5V) (ID=10mA,VGS=2.5V) Input Capacitance (VGS=0V, VDS=10V,f=1MHz) Common Source Output Capacitance Symbol Min Typ Max Unit BVDSS 50 — — V VGS(th) 0.4 — 1.8 V VDS(ON) — — 0.375 3.75 V VSD — — 1.5 V IDSS — — 1 10 uA IGSS — — +100 nA RDS(ON) — — CISS — — 25 pF COSS — — 15 pF t(on) — — 8 ns t(off) — — 15 ns trr — 30 — ns (VGS=0V, V DS=10V,f=1MHz) Turn-ON Time (VDS=20V, VGS=10V, RGEN=50Ω) Turn-OFF Time (VDS=20V, VGS=10V, RGEN=50Ω) Reverse Recovery Time (ISD=180mA, VGS=0V) 1. FR-5=1.0×0.75×0.062in. 2 . Alumina=0.4×0.3×0.024in.99.5%alumina. 3 . Pulse Width