AO3402

AO3402 N-Channel Enhancement Mode MOSFET Feature 30V/4.2A RDS(ON) = 50mΩ(MAX) @VGS = 10V. RDS(ON) =60mΩ(MAX) @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SC-59 for Surface Mount Package. SC-59 Applications ● Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Parameter Electrical Characteristics Parameter Off Characteristics Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse TA=25℃Unless Otherwise noted Symbol VDS VGS ID TA=25℃Unless Otherwise noted Symbol Test Conditions Limit Units 30 ±12 4.2 V V A Min Typ. Max Units - V BVDSS VGS=0V, ID=250μA 30 - IDSS VDS=30V, VGS=0V - - 1 μA IGSSF IGSSR VGS=12V, VDS=0V VGS=-12V, VDS=0V - - 100 -100 nA nA VGS(th) VGS= VDS, ID=250µA 0.6 - 2.5 V RDS(ON) VGS =10V, ID =4A VGS =4.5V, ID =3A - 48 55 50 60 mΩ mΩ VGS =2.5V, ID =2A - 60 65 mΩ 1.2 V On Characteristics Gate Threshold Voltage Static Drain-source On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS =0V, IS=1.25A 1 of 4 AO3402 Dynamic Qg Qgs Qgd ton td(ON) tr Td(off) tf toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Time Turn-on Delay time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-off Time VDS=15V,VGS=10V,ID=2A VDD=15V,ID=2A,VGS=10V,RG=6Ω 8.5 1.1 1.8 11 17 37 20 Typical Characteristics Figure 1．Output Characteristics Figure 2．Transfer Characteristics Typical Characteristics Figure 3．Gate Threshold Variation with Temperature Figure 4．On-Resistance Variation with Temperature 2 of 4 12 nC 40 nS 60 AO3402 Figure 5．On-Resistance vs. Gate-to-Source Voltage Voltage 3 of 4 Figure 6 ．Source-Drain Diode Forward AO3402 Package Outline Dimensions (UNIT: mm) 4 of 4