P-Channel
Channel Enhancement Mode MOSFET
Feature
-30V/-4.2A,
SC-59
RDS(ON) =55mΩ(MAX) @VGS = -10V.
RDS(ON) = 70mΩ(MAX) @VGS = -4.5V.
RDS(ON) =120mΩ(MAX) @VGS = -2.5V.
Super High dense cell design for extremely low RDS(ON)
Reliable and Rugged
SC-59 for Surface Mount Package
Applications
Power Management
1：Gate
Gate 2
2：Source 3：Drain
Portable Equipment and Battery Powered Systems.
1 of 3
2 of 3
3 of 3
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