SI2303

Plastic-Encapsulate Mosfets HOA2303 P-Channel MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter 1.Gate 2.Source SOT-23 3.Drain Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID -1.9 Continuous Source-Drain Diode Current IS -0.83 Maximum Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature TSTG -50 ~+150 Thermal Resistance from Junction to Ambient(t≤5s) GUANGDONG HOTTECH INDUSTRIAL CO., LTD V A ℃ Page:P3 -P1 Plastic-Encapsulate Mosfets HOA2303 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units V(BR)DSS VGS = 0V, ID =-250µA -30 VGS(th) VDS =VGS, ID =-250µA -1 Gate-Source Leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS =-30V, VGS =0V -1 µA Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage a Drain-Source On-State Resistance Forward Transconductance RDS(on) a gfs -3 VGS =-10V, ID =-1.9A 0.158 0.190 VGS =-4.5V, ID =-1.4A 0.275 0.330 VDS =-5V, ID =-1.9A 1 V Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf 155 VDS =-15V,VGS =0V,f =1MHz pF 35 25 VDS =-15V,VGS =-10V,ID =-1.9A VDS =-15V,VGS =-4.5V,ID=-1.9A 4 8 2 4 0.6 nC 1 f =1MHz 1.7 VDD=-15V, RL=10Ω, ID =-1.5A, VGEN=-10V,Rg=1Ω VDD=-15V, RL=10Ω, ID =-1.5A, VGEN=-4.5V,Rg=1Ω 8.5 17 4 8 11 18 11 18 8 16 36 44 37 45 12 18 9 14 Ω ns Drain-source Body diode characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage a IS -1.75 TC=25℃ -10 ISM VSD A IS=-1.5A -0.8 -1.2 V Notes : a. Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3 -P2 Plastic-Encapsulate Mosfets HOA2303 Typical Characteristics Output Characteristics -20 -10V Ta=25℃ -8.0V Transfer Characteristics -1.0 -6.0V Ta=25℃ Pulsed Pulsed -4.5V -0.8 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) -16 -4.0V -12 -3.5V -8 VGS=-3.0V -4 -0.6 -0.4 -0.2 -0 -0.0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) 300 —— VDS -5 -0 -1 -2 GATE TO SOURCE VOLTAGE (V) ID RDS(ON) 500 —— -3 VGS (V) VGS Ta=25℃ Ta=25℃ Pulsed 250 400 ON-RESISTANCE RDS(ON) (mΩ) ON-RESISTANCE RDS(ON) (mΩ) Pulsed 200 VGS=-4.5V 150 VGS=-10V 100 300 200 ID=-1.9A 100 50 0 -0 -4 -8 DRAIN CURRENT IS —— -10 -12 ID -16 -20 (A) -0 -4 -8 -12 GATE TO SOURCE VOLTAGE -16 VGS -20 (V) VSD Ta=25℃ SOURCE CURRENT IS (A) Pulsed -3 -1 -0.3 -0.1 -0.4 -0.6 -0.8 -1.0 SOURCE TO DRAIN VOLTAGE -1.2 -1.4 VSD (V) GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3 -P3