Plastic-Encapsulate Transistors
FEATURES
SS8050
Complimentary to SS8550
Marking :
(NPN)
Y1
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
1500
mA
Collector Power Dissipation
PC
300
mW
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
1. BASE
SOT-23
2. EMITTER
3. COLLECTO
unless otherwise specified)
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
VCEO
IC= 0.1mA, IB=0
25
V
Emitter-base breakdown voltage
VEBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
μA
Collector cut-off current
O
ICEO
VCB=20V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC= 100mA
120
hFE(2)
VCE=1V, IC= 800mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=800mA, IB= 80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB= 80mA
1.2
V
400
DC current gain
fT
Transition frequency
CLASSIFICATION OF
VCE=10V, IC= 50mA
f=30MHz
100
MHz
hFE
Rank
L
Range
120-200
GUANGDONG HOTTECH
H
200-350
INDUSTRIAL CO., LTD
J
300-400
Page:P2-P1
Plastic-Encapsulate Transistors
SS8050
Typical Characteristics
1000
0.5
VCE = 1V
0.4
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
0.3
IB = 1.5mA
0.2
IB = 1.0mA
0.1
100
10
IB = 0.5mA
0
0.4
0.8
1.2
1.6
1
0.1
2.0
1
10000
1000
100
IC = 10 IB
VCE = 1V
VBE(sat)
1000
100
VCE(sat)
10
0.1
1
10
100
10
1
0.1
0.0
1000
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
1000
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
1000
IE = 0
f = 1MHz
Cob [pF], CAPACITANCE
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
10
100
10
1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
GUANGDONG HOTTECH
VCE = 10V
100
10
1
1
10
100
400
IC[mA], COLLECTOR CURRENT
INDUSTRIAL CO., LTD
Page:P2-P2
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