SI2301

SI2301 -20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.3A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23 G A B C D E Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50 0 0.10 F 0.45 REF. 0.55 REF. S Millimeter G H K J L Min. 1.80 0.90 0.10 0.35 0.92 Max. 2.00 1.1 0.20 0.70 0.98 M 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 ID -2.3 IDM -8 Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation TA = 25o 2) TA = 75oC TJ, Tstg Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) PD 2) RthJA Junction-to-Ambient Thermal Resistance (PCB mounted) 3) Unit V A 1.25 W 0.8 o -55 to 150 100 166 C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 3) Surface Mounted on FR4 Board. - 1- 2012-7-8 SI2301 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min. VGS = 0V, ID = -250uA -20 Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS 1) Drain-Source On-State Resistance Gate Threshold Voltage R DS(on) VGS(th) Zero Gate Voltage Drain Current 0 IDSS VGS = -4.5V, ID = -2.3A 105 130 VGS = -2.5V, ID = -2.0A 145 190 mΩ VDS =VGS, ID = -250uA -0.45 Forward Transconductance 1) V VDS = -16V, V GS = 0V -1 uA o VDS = -16V, V GS = 0V TJ=55 Gate Body Leakage V IGSS VGS = ± 8V, VDS = 0V gfs VDS = -5V, ID = -2.3A C -10 ±100 6.5 nA S Dynamic Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 5.8 VDS = -6V, ID ^ -2.3A nC 0.85 VGS = -4.5V 1.7 13 VDD = -6V, RL=6Ω Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss ID ^ -1.A, VGEN = -4.5V RG = 6 Ω 36 ns 42 34 415 VDS = -6V, VGS = 0V Output Capacitance Coss pF 223 f = 1.0 MHz Reverse Transfer Capacitance 87 Crss Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage 1) IS VSD IS = -1.0A, VGS = 0V -0.8 -1.6 A -1.2 V Pulse test: pulse width