BUK7K17-80EX

BUK7K17-80E Dual N-channel 80 V, 17 mΩ standard level MOSFET 17 August 2017 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • • Dual MOSFET AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3. Applications • • • • 12 V, 24 V and 48 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Limiting values FET1 and FET2 VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 80 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 21 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 64 W VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 - 12.5 16.7 mΩ - 10.4 - nC Static characteristics FET1 and FET2 RDSon drain-source on-state resistance Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 10 A; VDS = 64 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 BUK7K17-80E Nexperia Dual N-channel 80 V, 17 mΩ standard level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain1 Simplified outline 8 7 6 Graphic symbol 5 D1 D1 S1 D2 D2 G1 S2 G2 mbk725 1 2 3 4 LFPAK56D (SOT1205) 6. Ordering information Table 3. Ordering information Type number Package BUK7K17-80E Name Description Version LFPAK56D plastic, single ended surface mounted package (LFPAK56D); 8 leads; 1.27 mm pitch; 4.7 mm x 5.3 mm x 1.05 mm body SOT1205 7. Marking Table 4. Marking codes Type number Marking code BUK7K17-80E 71780E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Limiting values FET1 and FET2 VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 80 V VDGR drain-gate voltage RGS = 20 kΩ - 80 V VGS gate-source voltage DC; Tj ≤ 175 °C -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 64 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 21 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 15 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 84 A IDM BUK7K17-80E Product data sheet peak drain current All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 2 / 12 BUK7K17-80E Nexperia Dual N-channel 80 V, 17 mΩ standard level MOSFET Symbol Parameter Tstg Tj Conditions Min Max Unit storage temperature -55 175 °C junction temperature -55 175 °C Source-drain diode FET1 and FET2 IS source current Tmb = 25 °C - 21 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 84 A - 116 mJ Avalanche ruggedness FET1 and FET2 EDS(AL)S [1] [2] non-repetitive drainsource avalanche energy ID = 21 A; Vsup ≤ 80 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 4 [1] [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 03aa16 120 ID (A) Pder (%) aaa-026831 25 20 80 15 10 40 5 0 0 50 100 150 Tmb (°C) 0 200 0 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 10 V Fig. 2. Fig. 1. Normalized total power dissipation as a function of mounting base temperature BUK7K17-80E Product data sheet Continuous drain current as a function of mounting base temperature, FET1 and FET2 All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 3 / 12 BUK7K17-80E Nexperia Dual N-channel 80 V, 17 mΩ standard level MOSFET ID (A) aaa-026829 102 Limit RDSon = VDS / ID tp = 10 µs 100 µs 10 DC 1 1 ms 10-1 10-1 1 10 ms 100 ms 102 10 103 VDS (V) Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and FET2 IAL (A) aaa-026828 102 10 (1) (2) 1 (3) 10-1 10-2 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25°C; (2) Tj (init) = 150°C; (3) Repetitive Avalanche Fig. 4. Avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - - 2.36 K/W Rth(j-a) thermal resistance from junction to ambient Minimum footprint; mounted on a printed circuit board - 95 - K/W BUK7K17-80E Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 4 / 12 BUK7K17-80E Nexperia Dual N-channel 80 V, 17 mΩ standard level MOSFET 003aaj748 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 P 0.02 δ= single shot Fig. 5. 10-5 10-4 10-3 10-2 T t tp 10-2 10-6 tp T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration, FET1 and FET2 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 72 - - V gate-source threshold voltage ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; Fig. 10 2.4 3 4 V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 4.5 V ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 10 1 - - V VDS = 80 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 80 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 - 12.5 16.7 mΩ VGS = 10 V; ID = 10 A; Tj = 175 °C; Fig. 12 - - 42 mΩ - 32.4 - nC - 7.1 - nC - 10.4 - nC - 1701 2262 pF - 174 208 pF Static characteristics FET1 and FET2 V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics FET1 and FET2 QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance BUK7K17-80E Product data sheet ID = 10 A; VDS = 64 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 15 All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 5 / 12 BUK7K17-80E Nexperia Dual N-channel 80 V, 17 mΩ standard level MOSFET Symbol Parameter Conditions Min Typ Max Unit Crss reverse transfer capacitance - 104 142 pF td(on) turn-on delay time - 8.1 - ns tr rise time - 11.1 - ns td(off) turn-off delay time - 22.5 - ns tf fall time - 13.4 - ns VDS = 60 V; RL = 5 Ω; VGS = 10 V; RG(ext) = 5 Ω; Tj = 25 °C Source-drain diode FET1 and FET2 VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.8 1.2 V trr reverse recovery time - 30.1 - ns Qr recovered charge IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C - 37.1 - nC ID (A) aaa-026830 40 10 V 6V 5V 5.5 V aaa-026832 60 RDSon (mΩ) 50 30 40 20 30 VGS = 4.5 V 20 10 10 4V 0 0 1 2 3 VDS (V) 0 4 Tj = 25 °C Fig. 6. Product data sheet 4 8 12 16 VGS (V) 20 Tj = 25 °C; ID = 10 A Output characteristics; drain current as a function of drain-source voltage; typical values, FET1 and FET2 BUK7K17-80E 0 Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values, FET1 and FET2 All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 6 / 12 BUK7K17-80E Nexperia Dual N-channel 80 V, 17 mΩ standard level MOSFET ID (A) aaa-026833 80 003aah028 10-1 ID (A) 10-2 60 typ min 10-3 max 40 10-4 20 175°C 0 0 1 2 3 10-5 Tj = 25°C 4 5 6 VGS (V) 10-6 7 VDS = 12 V Fig. 8. 003aah027 Fig. 9. 4 6 VGS (V) Sub-threshold drain current as a function of gate-source voltage, FET1 and FET2 aaa-026834 60 RDSon (mΩ) 50 max 4 2 Tj = 25 °C; VDS = 5 V Transfer characteristics; drain current as a function of gate-source voltage; typical values, FET1 and FET2 5 VGS(th) (V) 0 4.5 V 5V 40 3 typ 2 min 30 1 0 -60 0 60 120 T j (°C) 10 VGS = 10 V 0 10 20 30 ID (A) 40 Tj = 25 °C Fig. 10. Gate-source threshold voltage as a function of junction temperature, FET1 and FET2 Product data sheet 6V 0 180 ID = 1 mA ; VDS = VGS BUK7K17-80E 20 Fig. 11. Drain-source on-state resistance as a function of drain current; typical values, FET1 and FET2 All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 7 / 12 BUK7K17-80E Nexperia Dual N-channel 80 V, 17 mΩ standard level MOSFET 003aaj817 3 VGS (V) a aaa-026835 10 8 2.4 VDS = 14 V 64 V 1.8 6 1.2 4 0.6 2 0 -60 0 60 120 Tj ( °C) 0 180 0 10 20 30 QG (nC) 40 Tj = 25 °C; ID = 10 A Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature, FET1 and FET2 Fig. 13. Gate-source voltage as a function of gate charge; typical values, FET1 and FET2 aaa-026836 104 VDS C (pF) ID Ciss 103 VGS(pl) VGS(th) Coss VGS QGS2 QGS1 QGS 102 QGD QG(tot) Crss 003aaa508 10 10-1 Fig. 14. Gate charge waveform definitions 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values, FET1 and FET2 BUK7K17-80E Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 8 / 12 BUK7K17-80E Nexperia Dual N-channel 80 V, 17 mΩ standard level MOSFET IS (A) aaa-026837 60 45 30 15 175°C 0 0 0.2 0.4 Tj = 25°C 0.6 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values, FET1 and FET2 BUK7K17-80E Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 9 / 12 BUK7K17-80E Nexperia Dual N-channel 80 V, 17 mΩ standard level MOSFET 11. Package outline Plastic single ended surface mounted package LFPAK56D; 8 leads E SOT1205 A A b1 c1 L1 mounting base D H D1 D2 L 1 2 3 e b (8x) 4 w X c A E1 E2 A1 C θ Lp detail X 0 2.5 A max 1.05 nom min 1.02 mm 5 mm scale Dimensions Unit y C D(1) D1(1) D2 (ref) E(1) E1(1) 4.4 0.25 0.30 4.70 4.55 3.5 5.30 1.8 0.85 4.1 0.19 0.24 4.45 4.35 3.4 4.95 1.6 0.60 A1 b b1 0.1 0.50 0.0 0.35 c c1 E2 e 1.27 H L L1 Lp 6.2 1.3 0.55 0.85 5.9 0.8 0.30 0.40 w y 0.25 0.1 Note 1. Plastic or metal protrusions of 0.2 mm maximum per side are not included. Outline version References IEC JEDEC JEITA θ 8° 0° sot1205_po European projection Issue date 14-08-21 14-10-28 SOT1205 Fig. 17. Package outline LFPAK56D (SOT1205) BUK7K17-80E Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 10 / 12 BUK7K17-80E Nexperia Dual N-channel 80 V, 17 mΩ standard level MOSFET for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 12. Legal information Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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BUK7K17-80E Product data sheet Trademarks All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 11 / 12 BUK7K17-80E Nexperia Dual N-channel 80 V, 17 mΩ standard level MOSFET 13. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Package outline........................................................ 10 12. Legal information..................................................... 11 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 17 August 2017 BUK7K17-80E Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2017 © Nexperia B.V. 2017. All rights reserved 12 / 12