BUK7Y3R0-40HX

BUK7Y3R0-40H N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 10 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits • Fully automotive qualified to AEC-Q101: • • 175 °C rating suitable for thermally demanding environments Trench 9 Superjunction technology: • • Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint • Improved SOA and avalanche capability compared to standard TrenchMOS • Tight VGS(th) limits enable easy paralleling of MOSFETs LFPAK Gull Wing leads: • • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages • Visual (AOI) soldering inspection, no need for expensive x-ray equipment • Easy solder wetting for good mechanical solder joint LFPAK copper clip technology: • • Improved reliability, with reduced Rth and RDSon Increases maximum current capability and improved current spreading 3. Applications • • • • • 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C - - 120 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 172 W VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 1.8 2.55 3 mΩ ID = 25 A; VDS = 32 V; VGS = 10 V; Fig. 12; Fig. 13 - 6.3 15.8 nC nC Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Source-drain diode Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V - 19.5 - S softness factor IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 16 - 0.8 - BUK7Y3R0-40H Product data sheet All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 2 / 13 BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate mb D Simplified outline Graphic symbol D mb G mbb076 mounting base; connected to drain S 1 2 3 4 LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number BUK7Y3R0-40H Package Name Description Version LFPAK56; Power-SO8 plastic, single-ended surface-mounted package; 4 terminals SOT669 7. Marking Table 4. Marking codes Type number Marking code BUK7Y3R0-40H 73H040 BUK7Y3R0-40H Product data sheet All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 3 / 13 BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 40 V VGS gate-source voltage DC; Tj ≤ 175 °C -10 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 172 W ID drain current VGS = 10 V; Tmb = 25 °C - 120 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 2 - 600 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C - 120 A - 600 A - 50 mJ Source-drain diode IS source current Tmb = 25 °C [1] ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C Avalanche ruggedness EDS(AL)S [1] [2] [3] non-repetitive drainsource avalanche energy ID = 120 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 [2] [3] 120A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 03na19 120 Pder (%) 80 40 0 Fig. 1. 0 50 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature BUK7Y3R0-40H Product data sheet All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 4 / 13 BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 ID (A) aaa-027086 103 Limit RDSon = VDS / ID tp = 10 µs 102 100 µs 10 DC 1 ms 10 ms 100 ms 1 10-1 10-1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is a single pulse Fig. 2. Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) aaa-027085 103 102 (1) 10 (2) (3) 1 10-1 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25°C; (2) Tj (init) = 150°C; (3) Repetitive Avalanche Fig. 3. Avalanche rating; avalanche current as a function of avalanche time BUK7Y3R0-40H Product data sheet All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 5 / 13 BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 4 - 0.77 0.87 K/W aaa-027087 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 single shot P δ= Fig. 4. 10-5 10-4 10-3 10-2 T t tp 10-3 10-6 tp T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7Y3R0-40H Product data sheet All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 6 / 13 BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V ID = 250 µA; VGS = 0 V; Tj = -40 °C - 40.5 - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 8; Fig. 9 2.4 3 3.6 V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 8 - - 4.3 V ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 8 1 - - V VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.06 1 µA VDS = 16 V; VGS = 0 V; Tj = 125 °C - 0.8 10 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - 80 500 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 1.8 2.55 3 mΩ VGS = 10 V; ID = 25 A; Tj = 105 °C; Fig. 11 2.5 3.6 4.8 mΩ VGS = 10 V; ID = 25 A; Tj = 125 °C; Fig. 11 2.8 4 5.3 mΩ VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 11 3.5 5 6.5 mΩ f = 1 MHz; Tj = 25 °C 0.34 0.85 2.12 Ω ID = 25 A; VDS = 32 V; VGS = 10 V; Fig. 12; Fig. 13 - 34 59 nC - 9.8 15 nC - 6.3 15.8 nC - 2417 5449 pF - 688 1377 pF - 108 415 pF - 10 - ns - 8.1 - ns Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon RG drain-source breakdown voltage gate-source threshold voltage drain leakage current gate leakage current drain-source on-state resistance gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 21.4 - ns tf fall time - 10 - ns - 0.8 1.2 V VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 14 VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 5 Ω Source-drain diode VSD source-drain voltage BUK7Y3R0-40H Product data sheet IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15 All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 7 / 13 BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit trr reverse recovery time - 27 - ns Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V - 19.5 - nC S softness factor IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 16 - 0.8 - IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 16 - 0.7 - 160 ID (A) aaa-027088 10 V 6 V 5.5 V aaa-027095 20 RDSon (mΩ) 5V 120 15 80 10 4.5 V 40 5 VGS = 4 V 0 Fig. 5. 0 1 2 3 VDS (V) 0 4 0 5 10 15 VGS (V) 20 Tj = 25 °C Tj = 25 °C; ID = 25 A Output characteristics; drain current as a Fig. 6. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values aaa-027089 200 ID (A) VGS(th) (V) aaa-018139 5 4 150 Max 3 Typ 100 2 Min 50 1 -55°C 175°C Tj= 25°C 0 0 1 2 3 4 5 6 VGS (V) 0 -60 7 VDS = 8 V Fig. 7. Product data sheet 0 30 60 90 120 150 Tj (°C) 180 ID = 1 mA ; VDS = VGS Transfer characteristics; drain current as a function of gate-source voltage; typical values BUK7Y3R0-40H -30 Fig. 8. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 8 / 13 BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 aaa-018138 10-1 ID (A) aaa-027090 20 RDSon (mΩ) 10-2 4.5 V 5V 16 Min 10-3 Typ Max 12 10-4 5.5 V 6V 8 10 V 10-5 4 10-6 0 0 1 2 3 4 VGS (V) 5 Tj = 25 °C; VDS = 5V Fig. 9. a VGS = 20 V 0 20 40 60 80 100 120 140 ID (A) 160 Tj = 25 °C Sub-threshold drain current as a function of gate-source voltage Fig. 10. Drain-source on-state resistance as a function of drain current; typical values aaa-026897 2.4 VGS (V) 2 aaa-027092 10 8 1.6 6 VDS = 14 V 1.2 32 V 4 0.8 2 0.4 0 -60 -30 0 30 60 90 120 150 Tj (°C) 0 180 0 10 20 30 QG (nC) 40 Tj = 25 °C; ID = 25 A Fig. 11. Normalized drain-source on-state resistance factor as a function of junction temperature BUK7Y3R0-40H Product data sheet Fig. 12. Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 9 / 13 BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 aaa-027093 104 C (pF) VDS ID Ciss 103 VGS(pl) Coss VGS(th) VGS QGS2 QGS1 QGS Crss 102 QGD QG(tot) 003aaa508 10 10-1 Fig. 13. Gate charge waveform definitions 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aaf444 aaa-027094 160 IS (A) ID (A) 120 trr ta 80 tb 0 0.25 IRM 40 175°C 0 0 0.2 0.4 tb S= t a Tj = 25°C 0.6 0.8 1 VSD (V) IRM 1.2 t (s) VGS = 0 V Fig. 15. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK7Y3R0-40H Product data sheet Fig. 16. Reverse recovery waveform definitions All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 10 / 13 BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669) BUK7Y3R0-40H Product data sheet All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 11 / 13 BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 12. 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BUK7Y3R0-40H Product data sheet All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 12 / 13 BUK7Y3R0-40H Nexperia N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................2 5. Pinning information......................................................3 6. Ordering information....................................................3 7. Marking.......................................................................... 3 8. Limiting values............................................................. 4 9. Thermal characteristics............................................... 6 10. Characteristics............................................................ 7 11. Package outline........................................................ 11 12. Legal information.......................................................12 © Nexperia B.V. 2018. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 10 May 2018 BUK7Y3R0-40H Product data sheet All information provided in this document is subject to legal disclaimers. 10 May 2018 © Nexperia B.V. 2018. All rights reserved 13 / 13