MMBT3906

MMBT3906 PNP Transistor Features  For Switching and AF Amplifer Applications.  Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Marking: 3E Absolute Maximum Ratings (TA = 25℃) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 200 mA Power Dissipation PD 350 mW Junction Temperature TJ 150 O C TSTG - 55 to + 150 O C Storage Temperature Range www.pingjingsemi.com Revision：1.0 Oct-2017 1/4 MMBT3906 PNP Transistor Electrical Characteristics at TA = 25℃ Parameter Symbol Min. Max. Unit hFE hFE hFE hFE hFE 60 80 100 60 30 300 - - -ICBO - 50 nA -IEBO - 50 nA -V(BR)CBO 40 - V -V(BR)CEO 40 - V -V(BR)EBO 6 - V -VCE(sat) -VCE(sat) - 0.25 0.4 V V -VBE(sat) -VBE(sat) 0.65 - 0.85 0.95 V V fT 250 - MHz Cob - 4.5 pF Delay Time at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA td - 35 ns Rise Time at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA tr - 35 ns Storage Time at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA ts - 225 ns Fall Time at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA tf - 75 ns DC Current Gain at -VCE = 1 V, -IC = 0.1 mA at -VCE = 1 V, -IC = 1 mA at -VCE = 1 V, -IC = 10 mA at -VCE = 1 V, -IC = 50 mA at -VCE = 1 V, -IC = 100 mA Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB =1 mA at -IC = 50 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA Current Gain Bandwidth Product at -VCE = 20 V, -IC = 10 mA, f = 100 MHz Output Capacitance at -VCB = 5 V, IE = 0, f = 1 MHz www.pingjingsemi.com Revision：1.0 Oct-2017 2/4 MMBT3906 PNP Transistor Electrical Characteristics Curves Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature: Ta ( C) O www.pingjingsemi.com Revision：1.0 Oct-2017 3/4 MMBT3906 PNP Transistor Package Outline (SOT-23) Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 L1 0.550REF L 0.300 θ 0° 0.500 8° Ordering Information Device MMBT3906 www.pingjingsemi.com Revision：1.0 Oct-2017 Package SOT-23 Reel Dimension (inch) 7 Shipping Quantity 3,000 4/4