MMBT9015C

MMBT9015 PNP Transistor Features  For Switching and Amplifier Applications.  As Complementary Type of the PNP Transistor SOT-23 (TO-236) MMBT9014 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 45 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 100 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ TSTG -55 to 150 ℃ Storage Temperature Range Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter DC Current Gain at -VCE = 5 V, -IC = 1 mA Current Gain Group Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 μA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 μA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Transition Frequency at -VCE = 5 V, -IC = 10 mA Collector Base Capacitance at -VCB = 10 V, f = 1 MHz www.pingjingsemi.com Revision：1.0 Oct-2017 Symbol B C D Min. Typ. Max. 110 200 420 - 220 450 800 -ICBO - - 50 nA -IEBO - - 50 nA -V(BR)CBO 50 - - V -V(BR)CEO 45 - - V -V(BR)EBO 5 - - V -VCE(sat) - - 0.65 V -VBE(sat) - - 1 V FT 100 - - MHz Cob - - 7 pF HFE Unit 1/3 MMBT9015 PNP Transistor Electrical Characteristics Curves www.pingjingsemi.com Revision：1.0 Oct-2017 2/3 MMBT9015 PNP Transistor Package Outline(SOT-23) Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 L1 Device MMBT9015 www.pingjingsemi.com Revision：1.0 Oct-2017 0.550REF L 0.300 θ 0° Package SOT-23 0.500 8° Reel Dimension (inch) 7 Shipping 3,000 3/3