MMBTSC1623-L4

MMBTSC1623 NPN Transistor Features SOT-23 ⚫ High DC Current gain. ⚫ High voltage 1.Base 2.Emitter 3.Collector Marking Code: L4: L4. L5: L5. L6: L6. L7: L7. Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ TSTG -55 to 150 ℃ Storage Temperature Range www.pingjingsemi.com Revison：1.0 July-2018 1/4 MMBTSC1623 NPN Transistor Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Symbol L4 L5 L6 L7 HFE Min. Typ. Max. Unit 90 135 200 300 - 180 270 400 600 0.1 μA - Collector Base Cutoff Current at VCB = 60 V ICBO - Emitter Base Cutoff Current at VEB = 5 V IEBO 40 - 0.1 μA Collector Base Breakdown Voltage At IC = 100 μA V(BR)CBO 60 40 - 40 - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 50 - - V Emitter Base Breakdown Voltage at IE = 100 μA V(BR)EBO 5 - - V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA VCE(sat) - - 0.3 V Base Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA VBE(sat) - - 1 V FT - 250 - MHz Transition Frequency at VCE = 6 V, IC = 10 mA www.pingjingsemi.com Revison：1.0 July-2018 2/4 MMBTSC1623 NPN Transistor Static Characteristic 4 10uA 3 IC 8uA 6uA 5uA 4uA 3uA 1 IC Ta=25℃ DC CURRENT GAIN 7uA 2 —— Ta=100℃ hFE (mA) 9uA COLLECTOR CURRENT hFE 1000 COMMON EMITTER Ta=25℃ 100 2uA COMMON EMITTER VCE= 6V IB=1uA 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VBEsat —— VCEsat IC Ta=25℃ Ta=100 ℃ COLLECTOR CURREMT Ta=25℃ IC β=10 10 0.1 1 10 COLLECTOR CURREMT (mA) VBE fT 1000 —— IC 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) —— IC Ta=100 ℃ 100 10 IC 100 (mA) 100 β=10 1 100 —— 10 IC 300 1000 100 0.1 1 COLLECTOR CURRENT VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 2000 10 0.1 8 1 COMMON EMITTER VCE=6V 0.1 0.0 0.3 0.6 0.9 100 COMMON EMITTER VCE=6V Ta=25℃ 10 1.2 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) 50 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib CAPACITANCE C (pF) Ta=25 ℃ 10 Cob 1 Revison：1.0 July-2018 —— IC (mA) Ta 200 150 100 50 0 1 REVERSE VOLTAGE www.pingjingsemi.com PC 250 f=1MHz IE=0/IC=0 0.1 0.1 70 10 1 10 V (V) 20 0 25 50 75 AMBIENT TEMPERATURE 125 100 Ta 150 (℃ ) 3/4 MMBTSC1623 NPN Transistor Package Outline 0.8 Max. 1.150 A 0.900 1.025 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L θ 0.300 0o 2.2 Typ. 1.0 Dimensions in millimeter Min. 0.8 1.0 Symbol 1.9 SOT-23 (TO-236) 0.500 8o Recommended soldering pad Ordering Information Device Package Shipping MMBTSC1623 SOT-23 3,000/Tape & Reel (7 inches) www.pingjingsemi.com Revison：1.0 July-2018 4/4