MMBTSC1623
NPN Transistor
Features
SOT-23
⚫
High DC Current gain.
⚫
High voltage
1.Base 2.Emitter 3.Collector
Marking Code: L4: L4.
L5: L5.
L6: L6.
L7: L7.
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
60
V
Collector Emitter Voltage
VCEO
50
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
℃
TSTG
-55 to 150
℃
Storage Temperature Range
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Revison:1.0 July-2018
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MMBTSC1623
NPN Transistor
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
DC Current Gain
at VCE = 6 V, IC = 1 mA
Current Gain Group
Symbol
L4
L5
L6
L7
HFE
Min.
Typ.
Max.
Unit
90
135
200
300
-
180
270
400
600
0.1
μA
-
Collector Base Cutoff Current
at VCB = 60 V
ICBO
-
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
40
-
0.1
μA
Collector Base Breakdown Voltage
At IC = 100 μA
V(BR)CBO
60
40
-
40
-
V
Collector Emitter Breakdown Voltage
at IC = 1 mA
V(BR)CEO
50
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 μA
V(BR)EBO
5
-
-
V
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
VCE(sat)
-
-
0.3
V
Base Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
VBE(sat)
-
-
1
V
FT
-
250
-
MHz
Transition Frequency
at VCE = 6 V, IC = 10 mA
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Revison:1.0 July-2018
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MMBTSC1623
NPN Transistor
Static Characteristic
4
10uA
3
IC
8uA
6uA
5uA
4uA
3uA
1
IC
Ta=25℃
DC CURRENT GAIN
7uA
2
——
Ta=100℃
hFE
(mA)
9uA
COLLECTOR CURRENT
hFE
1000
COMMON
EMITTER
Ta=25℃
100
2uA
COMMON EMITTER
VCE= 6V
IB=1uA
0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
VCEsat
IC
Ta=25℃
Ta=100 ℃
COLLECTOR CURREMT
Ta=25℃
IC
β=10
10
0.1
1
10
COLLECTOR CURREMT
(mA)
VBE
fT
1000
——
IC
100
(mA)
IC
T =2
5℃
a
TRANSITION FREQUENCY
10
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
(mA)
(MHz)
——
IC
Ta=100 ℃
100
10
IC
100
(mA)
100
β=10
1
100
——
10
IC
300
1000
100
0.1
1
COLLECTOR CURRENT
VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
2000
10
0.1
8
1
COMMON EMITTER
VCE=6V
0.1
0.0
0.3
0.6
0.9
100
COMMON EMITTER
VCE=6V
Ta=25℃
10
1.2
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (V)
50
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
CAPACITANCE
C
(pF)
Ta=25 ℃
10
Cob
1
Revison:1.0 July-2018
——
IC
(mA)
Ta
200
150
100
50
0
1
REVERSE VOLTAGE
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PC
250
f=1MHz
IE=0/IC=0
0.1
0.1
70
10
1
10
V
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
125
100
Ta
150
(℃ )
3/4
MMBTSC1623
NPN Transistor
Package Outline
0.8
Max.
1.150
A
0.900
1.025
A1
0.000
0.050
0.100
b
c
D
0.300
0.080
2.800
0.400
0.115
2.900
0.500
0.150
3.000
E
1.200
1.300
1.400
HE
2.250
2.400
2.550
e
1.800
1.900
2.000
0.550REF
L1
L
θ
0.300
0o
2.2
Typ.
1.0
Dimensions in millimeter
Min.
0.8
1.0
Symbol
1.9
SOT-23 (TO-236)
0.500
8o
Recommended soldering pad
Ordering Information
Device
Package
Shipping
MMBTSC1623
SOT-23
3,000/Tape & Reel (7 inches)
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Revison:1.0 July-2018
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