MMBT9013H

MMBT9013 NPN Transistor Features SOT-23 (TO-236)  For Switching and Amplifier Applications.  As Complementary Type of the PNP Transistor MMBT9012 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ TSTG -55 to 150 ℃ Storage Temperature Range Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter DC Current Gain at VCE = 1 V, IC = 50 mA Current Gain Group at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 35 V Collector Base Cutoff Current at VCB = 5 V Emitter Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Voltage at VCE = 1 V, IC = 100 mA Transition Frequency at VCE = 6 V, IC = 20 mA www.pingjingsemi.com Revision：1.0 Oct-2017 Symbol G H Min. Typ. Max. 100 160 40 - 250 400 - ICBO - - 100 nA IEBO - - 100 nA V(BR)CBO 40 - - V V(BR)CEO 30 - - V V(BR)EBO 5 - - V VCE(sat) - - 0.6 V VBE(sat) - - 1 V VBE - - 1 V FT - 100 - MHz HFE Unit 1/3 Electrical Characteristics Curves www.pingjingsemi.com Revision：1.0 Oct-2017 MMBT9013 NPN Transistor 2/3 MMBT9013 NPN Transistor Package Outline(SOT-23) Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 L1 Device MMBT9013 www.pingjingsemi.com Revision：1.0 Oct-2017 0.550REF L 0.300 θ 0° Package SOT-23 0.500 8° Reel Dimension (inch) 7 Shipping 3,000 3/3