MMBTSC3875G

MMBTSC3875 NPN Transistor Features  For Switching and AF Amplifier Applications.  As Complementary Type of the PNP Transistor SOT-23 (TO-236) MMBTSA1504 is Recommended. 1.Base 2.Emitter 3.Collector Marking: MMBTSC3875O:ALO MMBTSC3875Y:ALY MMBTSC3875G:ALG MMBTSC3875L:ALL Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Power Dissipation PD 150 mW Junction Temperature TJ 150 ℃ TSTG -55 to 150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：1.0 Mar-2019 1/4 MMBTSC3875 NPN Transistor Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter DC Current Gain at VCE = 6 V, IC = 2 mA Current Gain Group Collector Base Cutoff Current at VCB = 60 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Transition Frequency at VCE = 10 V, IC = 1 mA Collector Base Capacitance at VCB = 10 V, f = 1 MHz www.pingjingsemi.com Revision：1.0 Mar-2019 O Y G L Symbol Min. Typ. Max. Unit HFE 70 120 200 350 - 140 240 400 700 ICBO - - 100 nA IEBO - - 100 nA V(BR)CBO 60 - - V V(BR)CEO 50 - - V V(BR)EBO 5 - - V VCE(sat) - 0.1 0.25 V VBE(sat) - - 1 V fT 80 - - MHz Cob - - 3.5 pF 2/4 MMBTSC3875 NPN Transistor Electrical Characteristics Curves Static Characteristic 8uA 3.0 COLLECTOR CURRENT 2.5 6uA 2.0 5uA 4uA 1.5 3uA 1.0 600 400 Ta=100 C o Ta=25 C 200 2uA 0.5 0.0 IB=1uA 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCE 0 10 10 COLLECTOR CURRENT VCEsat —— 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 800 1 (V) VBEsat —— IC 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCE= 6V o 7uA IC (mA) COMMON EMITTER Ta=25℃ 9uA hFE 10uA 3.5 hFE —— IC 800 DC CURRENT GAIN 4.0 Ta=25℃ 600 Ta=100℃ 400 IC 100 (mA) 150 IC β=10 150 100 Ta=100℃ 50 Ta=25℃ 200 0.1 1 COLLECTOR CURRENT o Ta=25℃ 1 500 600 700 BASE-EMITTER VOLTAGE www.pingjingsemi.com Revision：1.0 Mar-2019 800 VBE(mV) —— IC (mA) Ta 175 150 125 100 75 50 25 VCE=6V 400 Pc 200 100 150 10 COLLECTOR CURRENT Ta=100 C 10 1 (mA) COLLECTOR POWER DISSIPATION Pc (mW) IC (mA) COLLECTOR CURRENT IC IC—— VBE 150 100 0.1 300 0 0.1 100 150 10 900 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃) 3/4 MMBTSC3875 NPN Transistor Package Outline(SOT-23) Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 L1 0.550REF L 0.300 θ 0° 0.500 8° Ordering Information Device MMBTSC3875 www.pingjingsemi.com Revision：1.0 Mar-2019 Package SOT-23 Reel Dimension (inch) 7 Shipping 3,000 4/4