MMBT8550D(1.5A)

MMBT8550C / MMBT8550D (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the NPN transistor MMBT8050C and MMBT8050D (1.5A) is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (T a = 25 OC) Symbol Value Unit C o l l e c t o r E m itt e r V o lt a g e -VCEO 25 V Collec to r B ase V ol tag e -VCBO 40 V Emitter Base Voltage -VEBO 6 V Peak Collector Current -ICM 1.5 A Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O РАДИОТЕХ ® C C Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru MMBT8550C / MMBT8550D (1.5A) Characteristics at Tamb=25 OC Symbol Min. Max. Unit MMBT8550C hFE 120 250 - MMBT8550D hFE 160 400 - hFE 40 - - -ICBO - 100 nA -IEBO - 100 nA -VCE(sat) - 0.5 V -VBE(sat) - 1.2 V -V(BR)CEO 25 - V -V(BR)CBO 40 - V -V(BR)EBO 6 - V -VBE - 1 V fT 120 - MHz DC Current Gain at -VCE=1V, -IC=100mA at -VCE=1V, -IC=800mA Collector Cutoff Current at -VCB=35V Emitter Cutoff Current at -VBE=6V Collector Saturation Voltage at -IC=800mA, -IB=80mA Base Saturation Voltage at -IC=800mA, -IB=80mA Collector Emitter Breakdown Voltage at -IC=2mA Collector Base Breakdown Voltage at -IC=100µA Emitter Base Breakdown Voltage at -IE=100µA Base Emitter Voltage at -IC=10mA, -VCE=1V Gain Bandwidth Product at -VCE=10V, -IC=50mA SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 20/10/2005 MMBT8550C / MMBT8550D (1.5A) Typical Characteristics DC Current Gain -0.5 I B =-4.0mA I B =-3.5mA I B =-3.0mA I B =-2.5mA I B =-2.0mA I B =-1.5mA -0.4 -0.3 -0.2 I B =-1.0mA -0.1 I B =-0.5mA 0 -0.4 -0.8 -1.2 -1.6 -2.0 h FE , DC CURRENT GAIN Ic(mA), COLLECTOR CURRENT Static Characteristic 1000 100 10 1 -10000 VBE(sat) -100 VCE(sat) -10 -0.1 -1 -10 -100 -1 -10 -100 -1000 Base-Emitter On Voltage I C=10I B -1000 -0.1 I C(mA), COLLECTOR CURRENT -1000 Ic(mA), COLLECTOR CURRENT VBE(sat) , VCE(sat)(mV), SATURATION VOLTAGE VCE(V), COLLECTOR-EMITTR VOLTAGE Base -Emittr Saturation Voltage Collector-Emitter Saturation Voltage VCE=-1V -100 VCE=-1V -10 -1 -0.1 0 I C(mA), COLLECTOR CURRENT -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE (V), BASE-EMITTER VOLTAGE fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT Current Gain Bandwidth Product 1000 VCE=-10V 100 10 -1 -10 -100 -1000 I C(mA), COLLECTOR CURRENT SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 20/10/2005