MMBTSC945H

MMBTSC945 NPN Transistor SOT-23 (TO-236) Features ⚫ Excellent hFE Linearity ⚫ Low noise 1.Base 2.Emitter 3.Collector Marking: CR Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ TSTG -55 to 150 ℃ Storage Temperature Range Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit HFE 130 200 200 400 - Collector Base Cutoff Current at VCB = 60 V ICBO - 100 nA Emitter Base Cutoff Current at VEB = 5 V IEBO - 100 nA Collector Base Breakdown Voltage at IC = 100 μA V(BR)CBO 60 - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 50 - V Emitter Base Breakdown Voltage at IE = 100 μA V(BR)EBO 5 - V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA VCE(sat) - 0.3 V Base Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA VBE(sat) - 1 V fT 150 - MHz Cob - 3 pF DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Transition Frequency at VCE = 6 V, IC = 10 mA, f = 30 MHz Collector Output Capacitance at VCB = 10 V, f = 1 MHz www.pingjingsemi.com Revision：1.0 Nov-2018 L H 1/3 MMBTSC945 NPN Transistor Electrical Characteristics Curves Static Characteristic (mA) IC 27uA 24uA Ta=25℃ 300 DC CURRENT GAIN COLLECTOR CURRENT 8 21uA 18uA 6 IC Ta=100℃ COMMON EMITTER Ta=25℃ 30uA 10 hFE —— 1000 hFE 12 15uA 12uA 4 100 9uA 30 6uA 2 VCE=6V IB=3uA 0 0 2 6 8 10 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE 10 0.7 12 IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 100 Ta=100℃ Ta=25℃ 30 β=10 10 3 COLLECTOR CURRENT Cob / Cib 15 100 30 IC COLLECTOR POWER DISSIPATION PC (W) (pF) C CAPACITANCE 10 Cib 5 Cob Revision：1.0 Nov-2018 Ta=100℃ 400 β=10 0.3 1 10 3 PC —— 100 150 30 IC (mA) Ta 0.20 0.15 0.10 0.05 0.00 0.3 1 REVERSE BIAS VOLTAGE www.pingjingsemi.com 600 0.25 Ta=25℃ 0 0.1 IC COLLECTOR CURRENT f=1MHz IE=0 /IC=0 150 Ta=25℃ (mA) VCB / VEB —— 100 (mA) 800 200 0.1 150 IC VBEsat —— 1000 10 30 10 COLLECTOR CURRENT 300 1 3 1 (V) 10 3 V (V) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) 2/3 MMBTSC945 NPN Transistor Package Outline SOT-23（TO-236) 0.8 Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 0o θ 0.500 8o 2.2 Typ. 0.8 1.0 Min. 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 (TO-236) Recommended soldering pad Ordering Information Device MMBTSC945 www.pingjingsemi.com Revision：1.0 Nov-2018 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 3/3