MMBT2222A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Value Symbol Collector-Base Voltage 75 VCBO 40 VCEO Collector-Emitter Voltage 6 VEBO Emitter-Base Voltage Collector Current -Continuous 600 IC Collector Dissipation 300 PC Thermal Resistance, Junction to Ambient 417 RΘJA Junction Temperature 150 TJ Storage Temperature -55~+150 Tstg 2.EMITTER 3.COLLECTOR Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Pa rameter Symbol Collector-base breakdown voltage V(BR)CBO * T est conditions Min Typ Max Unit IC= 10μA, IE=0 75 V IC= 10mA, IB=0 40 V 6 V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 Collector cut-off current ICBO VCB=60V, IE=0 0.01 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.01 μA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 μA hFE(1) DC current gain * hFE(2) hFE(3) * Collector-emitter saturation voltage VCE(sat) * Base-emitter saturation voltage VBE(sat) * Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf VCE=10V, IC= 150mA 100 VCE=10V, IC= 0.1mA 40 VCE=10V, IC= 500mA 42 IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA, f=100MHz 300 1 0.3 2.0 1.2 300 V V MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 10 ns 25 ns VCC=30V, IC=150mA IB1=-IB2=15mA 225 ns 60 ns *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK L H RANGE 100–200 200–300 MARKING 13 C,Jan,2014 MMBT2222A Typical Characterisitics Static Characteristic 0.25 0.9mA 0.20 400 0.8mA hFE 0.7mA IC 0.6mA 0.15 DC CURRENT GAIN (A) COMMON EMITTER VCE=10V 1mA COMMON EMITTER Ta=25℃ COLLECTOR CURRENT —— IC hFE 500 0.5mA 0.10 0.4mA 0.3mA 0.05 Ta=100℃ 300 200 Ta=25℃ 100 0.2mA IB=0.1mA 0.00 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 0.5 —— 10 VCE 0 0.1 12 1 (V) 10 100 COLLECTOR CURRENT IC VBEsat 1.2 IC 600 (mA) —— IC 0.4 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 0.3 0.2 Ta=100℃ 0.1 Ta=25℃ Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 0.0 0.0 1 10 100 COLLECTOR CURRENT IC IC 1 600 10 (mA) 100 COLLECTOR CURRENT —— VBE Cob/ Cib 100 600 IC —— VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib (pF) 100 IC (mA) COMMON EMITTER VCE=10V C Ta=100℃ 10 CAPACITANCE COLLECTOR CURRENT 600 (mA) Ta=25℃ 1 0.1 0.0 0.2 0.4 0.6 0.8 Cob 10 1 0.1 1.0 1 BASE-EMMITER VOLTAGE VBE (V) 500 fT 10 REVERSE VOLTAGE —— IC Pc 400 —— V 20 (V) Ta COMMON EMITTER VCE=20V f=200MHz TRANSTION FREQUENCY fT COLLECTOR POWER DISSIPATION Pc (mW) (MHz) Ta=25℃ 100 10 300 200 100 0 80 COLLECTOR CURRENT IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150 C,Jan,2014