MMBT2907A

MMBT2907/MMBT2907A PNP Silicon Epitaxial Planar Transistor Features SOT-23  For switching and amplifier applications  The transistor is subdivided into one group according 3 1 to its DC current gain. 2 2.E 1.B 3.C Absolute Maximum Ratings (Ta=25℃ ) Parameter Collector Base Voltage Collector Emitter Voltage MMBT2907 MMBT2907A Symbol Value Unit -VCBO 60 V 40 -VCEO V 60 -VEBO 5 V Collector Current -IC 600 mA Power Dissipation Ptot 350 mW Junction Temperature TJ 150 TSTG - 55 to + 150 Emitter Base Voltage Storage Temperature Range O C O C Characteristics (Ta=25℃ ) Parameter Symbol Min. Max. Unit hFE 35 - - hFE 75 - - hFE 50 - - hFE 100 - - hFE 75 - - MMBT2907A hFE 100 - - hFE 100 300 - MMBT2907 hFE 30 - - hFE 50 - - MMBT2907 -ICBO - 20 nA MMBT2907A -ICBO - 10 nA DC Current Gain at -IC = 0.1 mA, -VCE = 10 V MMBT2907 MMBT2907A at -IC = 1 mA, -VCE = 10 V MMBT2907 MMBT2907A at -IC = 10 mA, -VCE = 10 V MMBT2907 at -IC = 150 mA, -VCE = 10 V at -IC = 500 mA, -VCE = 10 V MMBT2907A Collector Base Cutoff Current at -VCB = 50 V www.pingjingsemi.com Revision：1.0 Oct-2017 1/4 MMBT2907/MMBT2907A PNP Silicon Epitaxial Planar Transistor Collector Base Breakdown Voltage at -IC = 10 µA -V(BR)CBO 60 - V -V(BR)CEO -V(BR)CEO 40 - V 60 - V -V(BR)EBO 5 - V -VCE(sat) -VCE(sat) - 0.4 V - 1.6 V -VBE(sat) -VBE(sat) - 1.3 V - 2.6 V fT 200 - MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Cob - 8 pF Turn-on Time ton - 45 ns td - 10 ns tr - 40 ns toff - 100 ns ts - 80 ns tf - 30 ns Collector Emitter Breakdown Voltage at -IC = 10 mA MMBT2907 MMBT2907A Emitter Base Breakdown Voltage at -IE = 10 µA Collector Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Base Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Gain Bandwidth Product at -IC = 50 mA , -VCE = 20 V, f = 100 MHz at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA Delay Time at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA Rise Time at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA Turn-off Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA Storage Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA Fall Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA www.pingjingsemi.com Revision：1.0 Oct-2017 2/4 MMBT2907/MMBT2907A PNP Silicon Epitaxial Planar Transistor Ratings And Characteristic Curves www.pingjingsemi.com Revision：1.0 Oct-2017 3/4 MMBT2907/MMBT2907A PNP Silicon Epitaxial Planar Transistor Package Outline SOT-23 0.8 Typ. Max. 0.900 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 θ 0° 0.500 8° 2.2 Min. A 1.0 Dimensions in millimeter 0.8 1.0 Symbol 1.9 SOT-23 Recommended soldering pad Ordering information Device Package Shipping MMBT2907/MMBT2907A SOT-23 3000/Tape&Reel(7inches) www.pingjingsemi.com Revision：1.0 Oct-2017 4/4