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MMBT4401

MMBT4401

  • 厂商:

    PJ(平晶)

  • 封装:

    SOT-23

  • 描述:

    三极管 NPN Ic=600mA Vceo=40V hfe=20~300 P=300mW SOT23-3

  • 数据手册
  • 价格&库存
MMBT4401 数据手册
MMBT4401 NPN Transistor Features  For Switching and AF Amplifer Applications.  Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (TA = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation 1 PD 300 mW RθJA 417 TJ 150 O C TSTG - 55 to + 150 O C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range O C/W Note: On FR-5 board www.pingjingsemi.com Revision:1.0 Oct-2017 1/4 MMBT4401 NPN Transistor Electrical Characteristics at TA = 25℃ Parameter Symbol Min. Max. Unit hFE hFE hFE hFE hFE 20 40 80 100 40 300 - - ICBO - 0.1 µA IEBO - 0.1 µA V(BR)CBO 60 - V V(BR)CEO 40 - V V(BR)EBO 6 - V VCE(sat) VCE(sat) - 0.4 0.75 V V VBE(sat) VBE(sat) 0.75 - 0.95 1.2 V V fT 250 - MHz Cob - 6.5 pF Delay Time at VCC = 30 V, VBE = 2 V, IC = 150 mA, IB1 = 15 mA td - 15 ns Rise Time at VCC = 30 V, VBE = 2 V, IC = 150 mA, IB1 = 15 mA tr - 20 ns Storage Time at VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA ts - 225 ns Fall Time at VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA tf - 30 ns DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 2 V, IC = 500 mA Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 0.1 mA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 0.1 mA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Current Gain Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHz Collector Output Capacitance at VCB = 5 V, f = 1 MHz www.pingjingsemi.com Revision:1.0 Oct-2017 2/4 MMBT4401 NPN Transistor Electrical Characteristics Curves www.pingjingsemi.com Revision:1.0 Oct-2017 3/4 MMBT4401 NPN Transistor Package Outline (SOT-23) Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 L1 0.550REF L 0.300 θ 0° 0.500 8° Ordering Information Device MMBT4401 www.pingjingsemi.com Revision:1.0 Oct-2017 Package SOT-23 Reel Dimension (inch) 7 Shipping Quantity 3,000 4/4
MMBT4401 价格&库存

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MMBT4401
  •  国内价格
  • 20+0.13554
  • 200+0.10574
  • 600+0.08921
  • 3000+0.07172
  • 9000+0.06308
  • 21000+0.05843

库存:7227

MMBT4401
  •  国内价格
  • 50+0.06900
  • 500+0.06210
  • 5000+0.05750
  • 10000+0.05520
  • 30000+0.05290
  • 50000+0.05152

库存:2050

MMBT4401
    •  国内价格
    • 3000+0.05500

    库存:50000