MMBT5401

MMBT5401 PNP Silicon Epitaxial Planar Transistor for high voltage amplifier applications TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current Continuous -IC 600 mA Power Dissipation Ptot 350 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit hFE hFE hFE 50 60 50 240 - - Collector Base Cutoff Current at -VCB = 120 V -ICBO - 50 nA Emitter Base Cutoff Current at -VEB = 3 V -IEBO - 50 nA Collector Base Breakdown Voltage at -IC = 100 µA -V(BR)CBO 160 - V Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 150 - V Emitter Base Breakdown Voltage at -IE = 10 µA -V(BR)EBO 5 - V Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA -VCE(sat) - 0.2 0.5 V Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA -VBE(sat) - 1 1 V fT 100 300 MHz Cobo - 6 pF DC Current Gain at -VCE = 5 V, -IC = 1 mA at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 50 mA Gain Bandwidth Product at -VCE = 10 V, -IC = 10 mA, f = 100 MHz Output Capacitance at -VCB =10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. ® Dated：16/03/2015 Rev：01 MMBT5401 Power Dissipation: Ptot (mW) 500 400 300 200 100 0 0 25 100 150 A m b ie n t T e m p e ra tu re : T a ( C ) 200 O F ig . 1 P o w e r D e ra tin g C u rv e SEMTECH ELECTRONICS LTD. ® Dated：16/03/2015 Rev：01